The operation of a novel hot electron vertical cavity surface emitting laser

Date
1998
Advisor
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Source Title
Proceedings of SPIE Vol. 3283, Physics and Simulation of Optoelectronic Devices VI
Print ISSN
0277-786X
Electronic ISSN
Publisher
SPIE
Volume
3283
Issue
Pages
162 - 170
Language
English
Type
Conference Paper
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Abstract

The hot Electron Light Emission and Lasing in Semiconductor Heterostructures devices (HELLISH-1) is novel surface emitter consisting of a GaAs quantum well, within the depletion region, on the n side of Ga 1-xAlxAs p- n junction. It utilizes hot electron transport parallel to the layers and injection of hot electron hole pairs into the quantum well through a combination of mechanisms including tunnelling, thermionic emission and diffusion of 'lucky' carriers. Super Radiant HELLISH-1 is an advanced structure incorporating a lower distributed Bragg reflector (DBR). Combined with the finite reflectivity of the upper semiconductor-air interface reflectivity it defines a quasi- resonant cavity enabling emission output from the top surface with a higher spectral purity. The output power has increased by two orders of magnitude and reduced the full width at half maximum (FWHM) to 20 nm. An upper DBR added to the structure defines HELLISH-VCSEL which is currently the first operational hot electron surface emitting laser and lases at room temperature with a 1.5 nm FWHM. In this work we demonstrate and compare the operation of UB-HELLISH-1 and HELLISH-VCSEL using experimental and theoretical reflectivity spectra over an extensive temperature range.

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Keywords
Hot electron laser, Longitudinal transport, Surface emitting device, Vertical Cavity Surface Emitting Laser(VCSEL), Bragg cells, Electric conductivity
Citation
Published Version (Please cite this version)