Evolution of the mosaic structure in InGaN layer grown on a thick GaN template and sapphire substrate

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buir.contributor.authorÖzbay, Ekmel
buir.contributor.orcidÖzbay, Ekmel|0000-0003-2953-1828
dc.citation.epage4481en_US
dc.citation.issueNumber11en_US
dc.citation.spage4471en_US
dc.citation.volumeNumber24en_US
dc.contributor.authorArslan, E.en_US
dc.contributor.authorOzturk, M. K.en_US
dc.contributor.authorCakmak, H.en_US
dc.contributor.authorDemirel, P.en_US
dc.contributor.authorOzcelik, S.en_US
dc.contributor.authorÖzbay, Ekmelen_US
dc.date.accessioned2015-07-28T12:01:02Z
dc.date.available2015-07-28T12:01:02Z
dc.date.issued2013-08-08en_US
dc.departmentDepartment of Physicsen_US
dc.departmentDepartment of Electrical and Electronics Engineeringen_US
dc.departmentNanotechnology Research Center (NANOTAM)en_US
dc.description.abstractThe InxGa1-xN epitaxial layers, with indium (x) concentration changes between 0.16 and 1.00 (InN), were grown on GaN template/(0001) Al2O3 substrate by metal organic chemical vapour deposition. The indium content (x), lattice parameters and strain values in the InGaN layers were calculated from the reciprocal lattice mapping around symmetric (0002) and asymmetric (10-15) reflection of the GaN and InGaN layers. The characteristics of mosaic structures, such as lateral and vertical coherence lengths, tilt and twist angle and heterogeneous strain and dislocation densities (edge and screw dislocations) of the InGaN epilayers and GaN template layers were investigated by using high-resolution X-ray diffraction (HR-XRD) measurements. With a combination of Williamson-Hall (W-H) measurements and the fitting of twist angles, it was found that the indium content in the InGaN epilayers did not strongly effect the mosaic structures' parameters, lateral and vertical coherence lengths, tilt and twist angle, or heterogeneous strain of the InGaN epilayers.en_US
dc.identifier.doi10.1007/s10854-013-1427-4en_US
dc.identifier.issn0957-4522
dc.identifier.urihttp://hdl.handle.net/11693/12329
dc.language.isoEnglishen_US
dc.publisherSpringeren_US
dc.relation.isversionofhttp://dx.doi.org/10.1007/s10854-013-1427-4en_US
dc.source.titleJournal of Materials Science: Materials in Electronicsen_US
dc.subjectX-ray-diffractionen_US
dc.subjectEpitaxial GaNen_US
dc.subjectThreading dislocationsen_US
dc.subjectPhysical - propertiesen_US
dc.subjectDefect structureen_US
dc.subjectFilmsen_US
dc.subjectDiffractometryen_US
dc.subjectSpreaden_US
dc.titleEvolution of the mosaic structure in InGaN layer grown on a thick GaN template and sapphire substrateen_US
dc.typeArticleen_US

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