Ten million-atom InGaAs embedded quantum dot electron g factor calculations using semi-empirical pseudopotentials

buir.advisorBulutay, Ceyhun
dc.contributor.authorKahraman, Mustafa
dc.date.accessioned2022-11-09T09:51:23Z
dc.date.available2022-11-09T09:51:23Z
dc.date.copyright2022-10
dc.date.issued2022-10
dc.date.submitted2022-10-31
dc.departmentDepartment of Physicsen_US
dc.descriptionCataloged from PDF version of article.en_US
dc.descriptionThesis (Ph.D.): Bilkent University, Department of Physics, İhsan Doğramacı Bilkent University, 2022en_US
dc.descriptionIncludes bibliographical references (leaves 22-30).en_US
dc.description.abstractQuantum technologies rely on key capabilities such as electron spin control over the full-Bloch sphere, generation of indistinguishable single photons, or entangled photon pairs. For all these purposes, arguably the most established semiconductor structure currently is the self-assembled InGaAs quantum dots (QDs). In this thesis, electron ground state g tensors of embedded InGaAs QDs are calculated employing an atomistic empirical pseudopotential method. Computed QDs have varied size, shape, indium molar fraction but uniform strain. The components of the g tensor do not show appreciable deviation even though the shape is anisotropic for some of the studied QDs. Universality is observed when family of g factor curves is plotted with respect to energy gap which generalizes the findings of a recent study under more restricted conditions. Our work expands its applicability to alloy QDs with different shapes, and finite confinement putting it on a more realistic foundation by allowing penetration to the matrix material. Our regression model shows that the effect of magnetic field on the electron in an InGaAs QD will be the minimal when the so-called, s-shell optical transition energy is around 1.13 eV. Furthermore, low indium molar fraction is unfavorable in terms of g factor tunability. Our findings could be beneficial in the fabrication of g-near-zero QDs or other desired g values aimed for spintronic or electron spin resonance applications.en_US
dc.description.degreePh.D.en_US
dc.description.statementofresponsibilityby Mustafa Kahramanen_US
dc.format.extentix, 32 leaves : 30 cm.en_US
dc.identifier.itemidB020951
dc.identifier.urihttp://hdl.handle.net/11693/110845
dc.language.isoEnglishen_US
dc.publisherBilkent Universityen_US
dc.rightsinfo:eu-repo/semantics/openAccessen_US
dc.subjectg factoren_US
dc.subjectg tensoren_US
dc.subjectQuantum doten_US
dc.subjectAtomistic electronic structureen_US
dc.subjectInGaAsen_US
dc.titleTen million-atom InGaAs embedded quantum dot electron g factor calculations using semi-empirical pseudopotentialsen_US
dc.title.alternativeOn milyon atomlu, gömülü InGaAs kuantum noktaların yarı-deneysel potansiyellerle elektron g çarpanı hesaplamalarıen_US
dc.typeThesisen_US
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