Electron initiated impact ionization in AlGaN alloys

dc.citation.epageL62en_US
dc.citation.issueNumber10en_US
dc.citation.spageL59en_US
dc.citation.volumeNumber17en_US
dc.contributor.authorBulutay, C.en_US
dc.date.accessioned2016-02-08T10:32:18Z
dc.date.available2016-02-08T10:32:18Z
dc.date.issued2002en_US
dc.departmentDepartment of Physicsen_US
dc.description.abstractDetailed impact ionization (II) analysis of electrons is presented for AlGaN alloys as a vital resource for solar-blind avalanche photodiode and high power transistor applications. Necessary ingredients for the II characterization are supplied from a recent experiment on the GaN end, and a Keldysh analysis for the AlN end, of the alloy AlGaN. High-field electron dynamics are simulated using an ensemble Monte Carlo framework, accounting for all valleys in the lowest two conduction bands, obtained from accurate empirical pseudopotential band structure computations. The effect of alloy scattering on II is considered and observed to be significant. For any AlxGa1-xN alloy, the electron II coefficients are found to obey the form, A exp(-K/F), for the electric field, F.en_US
dc.identifier.doi10.1088/0268-1242/17/10/102en_US
dc.identifier.issn0268-1242
dc.identifier.urihttp://hdl.handle.net/11693/24643
dc.language.isoEnglishen_US
dc.publisherInstitute of Physicsen_US
dc.relation.isversionofhttp://dx.doi.org/10.1088/0268-1242/17/10/102en_US
dc.source.titleSemiconductor Science and Technologyen_US
dc.subjectAluminum alloysen_US
dc.subjectBand structureen_US
dc.subjectElectric field effectsen_US
dc.subjectElectronsen_US
dc.subjectMonte Carlo methodsen_US
dc.subjectPhotodiodesen_US
dc.subjectConduction bandsen_US
dc.subjectImpact ionizationen_US
dc.titleElectron initiated impact ionization in AlGaN alloysen_US
dc.typeArticleen_US

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