XPS investigation of thin SiOx and SiOxNy overlayers
| buir.contributor.author | Süzer, Şefik | |
| buir.contributor.author | Aydınlı, Atilla | |
| dc.citation.epage | 614 | en_US |
| dc.citation.issueNumber | SI | en_US |
| dc.citation.spage | 611 | en_US |
| dc.citation.volumeNumber | 481 | en_US |
| dc.contributor.author | Birer, O. | en_US |
| dc.contributor.author | Sayan, S. | en_US |
| dc.contributor.author | Süzer, Şefik | en_US |
| dc.contributor.author | Aydınlı, Atilla | en_US |
| dc.date.accessioned | 2015-07-28T11:56:52Z | |
| dc.date.available | 2015-07-28T11:56:52Z | |
| dc.date.issued | 1999-05-04 | en_US |
| dc.department | Department of Physics | en_US |
| dc.description.abstract | Angle-resolved XPS is used to determine the thickness and the uniformity of the chemical composition with respect to oxygen and nitrogen of the very thin silicon oxide and oxynitride overlayers grown on silicon. (C) 1999 Elsevier Science B.V. All rights reserved. | en_US |
| dc.identifier.doi | 10.1016/S0022-2860(98)00943-0 | en_US |
| dc.identifier.issn | 0022-2860 | |
| dc.identifier.uri | http://hdl.handle.net/11693/11100 | |
| dc.language.iso | English | en_US |
| dc.publisher | Elsevier | en_US |
| dc.relation.isversionof | http://dx.doi.org/10.1016/S0022-2860(98)00943-0 | en_US |
| dc.source.title | Journal of Molecular Structure | en_US |
| dc.subject | Angle-resolved Xps | en_US |
| dc.subject | Thickness Determination | en_US |
| dc.subject | Siliconoxynitrides | en_US |
| dc.title | XPS investigation of thin SiOx and SiOxNy overlayers | en_US |
| dc.type | Article | en_US |
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