XPS investigation of a CdS-Based photoresistor under working conditions: operando − XPS

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buir.contributor.authorSüzer, Şefik
dc.citation.epage2994en_US
dc.citation.issueNumber6en_US
dc.citation.spage2990en_US
dc.citation.volumeNumber84en_US
dc.contributor.authorSezen, H.en_US
dc.contributor.authorRockett, A. A.en_US
dc.contributor.authorSüzer, Şefiken_US
dc.date.accessioned2015-07-28T11:59:12Z
dc.date.available2015-07-28T11:59:12Z
dc.date.issued2012en_US
dc.departmentDepartment of Chemistryen_US
dc.description.abstractA noncontact chemical and electrical measurement X-ray photoelectron spectroscopy (XPS) technique is performed to investigate a CdS-based photoresistor during its operation. The main objective of the technique is to trace chemical- and location-specified surface potential variations as shifts of the XPS Cd 3d5/2 peak position without and under photoillumination with four different lasers. The system is also modeled to extract electrical information. By analyzing the measured potential variations with this model, locationdependent resistance values are represented (i) two dimensionally for line scans and (ii) three dimensionally for areal measurements. In both cases, one of the dimensions is the binding energy. The main advantage of the technique is its ability to assess an element-specific surface electrical potential of a device under operation based on the energy deviation of core level peaks in surface domains. Detection of the variations in electrical potentials and especially their responses to the energy of the illuminating source in operando, is also shown to be capable of detecting, locating, and identifying the chemical nature of structural and other types of defects.en_US
dc.identifier.doi10.1021/ac300220uen_US
dc.identifier.eissn1520-6882
dc.identifier.issn0003-2700
dc.identifier.urihttp://hdl.handle.net/11693/11891
dc.language.isoEnglishen_US
dc.publisherAmerican Chemical Societyen_US
dc.relation.isversionofhttp://dx.doi.org/10.1021/ac300220uen_US
dc.source.titleAnalytical Chemistryen_US
dc.titleXPS investigation of a CdS-Based photoresistor under working conditions: operando − XPSen_US
dc.typeArticleen_US

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