Design, fabrication, and characterization of normally-off GaN HEMTS
buir.advisor | Özbay, Ekmel | |
dc.contributor.author | Gülseren, Melisa Ekin | |
dc.date.accessioned | 2019-08-02T08:43:23Z | |
dc.date.available | 2019-08-02T08:43:23Z | |
dc.date.copyright | 2019-07 | |
dc.date.issued | 2019-07 | |
dc.date.submitted | 2019-07-30 | |
dc.description | Cataloged from PDF version of article. | en_US |
dc.description | Thesis (M.S.) : Bilkent University, Department of Electrical and Electronics Engineering, İhsan Doğramacı Bilkent University, 2019. | en_US |
dc.description | Includes bibliographical references (leaves 110-115). | en_US |
dc.description.abstract | GaN-based high-electron-mobility transistors (HEMTs) have been developing rapidly from the time when they were first demonstrated in the 1990s. They have consistently been presented as a displacement technology to silicon based power devices owing to the superior material properties of GaN such as high-electric breakdown field, high-electron saturation velocity, and high mobility. Normally-off GaN HEMT devices are particularly significant in power electronics applications. In this thesis, a comprehensive study of normally-off high-electron-mobility transistors is presented, including theoretical background review, theoretical analysis, physically-based device simulations, device fabrication and optimization and electrical characterization. p-GaN gate InAlN/GaN HEMT and recessed AlGaN/GaN MISHEMT devices have been successfully demonstrated. | en_US |
dc.description.provenance | Submitted by Betül Özen (ozen@bilkent.edu.tr) on 2019-08-02T08:43:22Z No. of bitstreams: 1 DESIGN, FABRICATION, AND CHARACTERIZATION OF NORMALLY-OFF GAN HEMTS.pdf: 4002133 bytes, checksum: b8231a2d0886123ad50738d1cfeeab57 (MD5) | en |
dc.description.provenance | Made available in DSpace on 2019-08-02T08:43:23Z (GMT). No. of bitstreams: 1 DESIGN, FABRICATION, AND CHARACTERIZATION OF NORMALLY-OFF GAN HEMTS.pdf: 4002133 bytes, checksum: b8231a2d0886123ad50738d1cfeeab57 (MD5) Previous issue date: 2019-07 | en |
dc.description.statementofresponsibility | by Melisa Ekin Gülseren | en_US |
dc.format.extent | xvii, 115 leaves : illustrations (some color), charts ; 30 cm. | en_US |
dc.identifier.itemid | B160105 | |
dc.identifier.uri | http://hdl.handle.net/11693/52291 | |
dc.language.iso | English | en_US |
dc.rights | info:eu-repo/semantics/openAccess | en_US |
dc.subject | HEMT | en_US |
dc.subject | GaN | en_US |
dc.subject | InAlN | en_US |
dc.subject | Normally-off | en_US |
dc.subject | Power electronics | en_US |
dc.subject | Threshold voltage | en_US |
dc.subject | Atomic layer deposition | en_US |
dc.subject | Alumina | en_US |
dc.subject | Recess etch | en_US |
dc.subject | Fluorine treatement | en_US |
dc.subject | p-GaN | en_US |
dc.title | Design, fabrication, and characterization of normally-off GaN HEMTS | en_US |
dc.title.alternative | Normalde kapalı YEMT aygıtların tasarım, fabrikasyon ve karakterizasyonu | en_US |
dc.type | Thesis | en_US |
thesis.degree.discipline | Electrical and Electronic Engineering | |
thesis.degree.grantor | Bilkent University | |
thesis.degree.level | Master's | |
thesis.degree.name | MS (Master of Science) |
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