Design, fabrication, and characterization of normally-off GaN HEMTS

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buir.advisorÖzbay, Ekmel
dc.contributor.authorGülseren, Melisa Ekin
dc.date.accessioned2019-08-02T08:43:23Z
dc.date.available2019-08-02T08:43:23Z
dc.date.copyright2019-07
dc.date.issued2019-07
dc.date.submitted2019-07-30
dc.descriptionCataloged from PDF version of article.en_US
dc.descriptionThesis (M.S.) : Bilkent University, Department of Electrical and Electronics Engineering, İhsan Doğramacı Bilkent University, 2019.en_US
dc.descriptionIncludes bibliographical references (leaves 110-115).en_US
dc.description.abstractGaN-based high-electron-mobility transistors (HEMTs) have been developing rapidly from the time when they were first demonstrated in the 1990s. They have consistently been presented as a displacement technology to silicon based power devices owing to the superior material properties of GaN such as high-electric breakdown field, high-electron saturation velocity, and high mobility. Normally-off GaN HEMT devices are particularly significant in power electronics applications. In this thesis, a comprehensive study of normally-off high-electron-mobility transistors is presented, including theoretical background review, theoretical analysis, physically-based device simulations, device fabrication and optimization and electrical characterization. p-GaN gate InAlN/GaN HEMT and recessed AlGaN/GaN MISHEMT devices have been successfully demonstrated.en_US
dc.description.provenanceSubmitted by Betül Özen (ozen@bilkent.edu.tr) on 2019-08-02T08:43:22Z No. of bitstreams: 1 DESIGN, FABRICATION, AND CHARACTERIZATION OF NORMALLY-OFF GAN HEMTS.pdf: 4002133 bytes, checksum: b8231a2d0886123ad50738d1cfeeab57 (MD5)en
dc.description.provenanceMade available in DSpace on 2019-08-02T08:43:23Z (GMT). No. of bitstreams: 1 DESIGN, FABRICATION, AND CHARACTERIZATION OF NORMALLY-OFF GAN HEMTS.pdf: 4002133 bytes, checksum: b8231a2d0886123ad50738d1cfeeab57 (MD5) Previous issue date: 2019-07en
dc.description.statementofresponsibilityby Melisa Ekin Gülserenen_US
dc.format.extentxvii, 115 leaves : illustrations (some color), charts ; 30 cm.en_US
dc.identifier.itemidB160105
dc.identifier.urihttp://hdl.handle.net/11693/52291
dc.language.isoEnglishen_US
dc.rightsinfo:eu-repo/semantics/openAccessen_US
dc.subjectHEMTen_US
dc.subjectGaNen_US
dc.subjectInAlNen_US
dc.subjectNormally-offen_US
dc.subjectPower electronicsen_US
dc.subjectThreshold voltageen_US
dc.subjectAtomic layer depositionen_US
dc.subjectAluminaen_US
dc.subjectRecess etchen_US
dc.subjectFluorine treatementen_US
dc.subjectp-GaNen_US
dc.titleDesign, fabrication, and characterization of normally-off GaN HEMTSen_US
dc.title.alternativeNormalde kapalı YEMT aygıtların tasarım, fabrikasyon ve karakterizasyonuen_US
dc.typeThesisen_US
thesis.degree.disciplineElectrical and Electronic Engineering
thesis.degree.grantorBilkent University
thesis.degree.levelMaster's
thesis.degree.nameMS (Master of Science)

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