Raman and TEM studies of Ge nanocrystal formation in SiOx: Ge/SiOx multilayers

Simple item page
buir.contributor.authorAydınlı, Atilla
dc.citation.epage291en_US
dc.citation.issueNumber2en_US
dc.citation.spage288en_US
dc.citation.volumeNumber4en_US
dc.contributor.authorDana, Aykutluen_US
dc.contributor.authorAǧan, S.en_US
dc.contributor.authorTokay, S.en_US
dc.contributor.authorAydınlı, Atillaen_US
dc.contributor.authorFinstad, T. G.en_US
dc.coverage.spatialİstanbul, Turkeyen_US
dc.date.accessioned2016-02-08T11:42:03Zen_US
dc.date.available2016-02-08T11:42:03Zen_US
dc.date.issued2007en_US
dc.departmentDepartment of Physicsen_US
dc.departmentNanotechnology Research Center (NANOTAM)en_US
dc.descriptionDate of Conference: 30 July-4 August 2006en_US
dc.descriptionConference Name: International Conference on Superlattices, Nano-Structures and Nano-Devices, ICSNN 2006en_US
dc.description.abstractAlternating germanosilicate-siliconoxide layers of 10-30 nm thickness were grown on Si substrates by plasma enhanced chemically vapor deposition (PECVD). The compositions of the grown films were determined by X-ray photoelectron spectroscopy measurements. The films were annealed at temperatures varying from 670 to 1000°C for 5 to 45 minutes under nitrogen atmosphere. High resolution cross section TEM images, electron diffraction and electron energy-loss spectroscopy as well as energy-dispersive X-ray analysis (EDAX) data confirm presence of Ge nanocrystals in each layer. The effect of annealing on the Ge nanocrystal formation in multilayers was investigated by Raman spectroscopy and Transmission Electron Microscopy (TEM). As the annealing temperature is raised to 850°C, single layer of Ge nanocrystals observed at lower annealing temperatures is transformed into a double layer with the smaller sized nanocrystals closer to the substrate SiO2 interface.en_US
dc.description.provenanceMade available in DSpace on 2016-02-08T11:42:03Z (GMT). No. of bitstreams: 1 bilkent-research-paper.pdf: 70227 bytes, checksum: 26e812c6f5156f83f0e77b261a471b5a (MD5) Previous issue date: 2007en
dc.identifier.doi10.1002/pssc.200673233en_US
dc.identifier.issn1862-6351en_US
dc.identifier.urihttp://hdl.handle.net/11693/27018en_US
dc.language.isoEnglishen_US
dc.publisherWileyen_US
dc.relation.isversionofhttp://dx.doi.org/10.1002/pssc.200673233en_US
dc.source.titlePhysica Status Solidi (C): Current Topics in Solid State Physicsen_US
dc.subjectAnnealing temperaturesen_US
dc.subjectCross section TEMen_US
dc.subjectEnergy dispersive X-ray analysisen_US
dc.subjectGermano silicateen_US
dc.subjectNanocrystal formationen_US
dc.subjectNitrogen atmosphereen_US
dc.subjectSi substratesen_US
dc.subjectSilicon oxidesen_US
dc.subjectTransmission electron microscopy (TEM)en_US
dc.subjectArchitectural acousticsen_US
dc.subjectAtmospheric temperatureen_US
dc.subjectElectron energy loss spectroscopyen_US
dc.subjectMolecular beam epitaxyen_US
dc.subjectMolecular orbitalsen_US
dc.subjectMolecular spectroscopyen_US
dc.subjectNanocrystalline alloysen_US
dc.subjectNanocrystalsen_US
dc.subjectNanostructuresen_US
dc.subjectNanotechnologyen_US
dc.subjectPhotoelectron spectroscopyen_US
dc.subjectPlasma depositionen_US
dc.subjectPlasma diagnosticsen_US
dc.subjectPlasma enhanced chemical vapor depositionen_US
dc.subjectSilicon compoundsen_US
dc.subjectX ray diffraction analysisen_US
dc.subjectX ray photoelectron spectroscopyen_US
dc.titleRaman and TEM studies of Ge nanocrystal formation in SiOx: Ge/SiOx multilayersen_US
dc.typeConference Paperen_US

Files

Original bundle
Now showing 1 - 1 of 1
Thumbnail Image
Name:
Raman and TEM studies of Ge nanocrystal formation in SiO xGeSiOx multilayers.pdf
Size:
215.38 KB
Format:
Adobe Portable Document Format
Description:
Full printable version
Download

Collections

Department of Physics
Nanotechnology Research Center (NANOTAM)