Fabrication and characterization of Bismuth Hall sensors at room temperature

Simple item page
buir.advisorOral, Ahmet
dc.contributor.authorBayer, Gözde
dc.date.accessioned2016-01-08T20:17:54Z
dc.date.available2016-01-08T20:17:54Z
dc.date.issued2003
dc.descriptionAnkara : The Department of Physics and the Institute of Engineering and Science of Bilkent Univ., 2003.en_US
dc.descriptionThesis (Master's) -- Bilkent University, 2003.en_US
dc.descriptionIncludes bibliographical references leaves 48-50.en_US
dc.description.abstractSmall-scale Hall effect devices have attracted a great deal of research interest in recent years. It is well known that bulk single crystal of bismuth exhibit a large magnetoresistance effect and the recognition of this fact has stimulated a number of recent efforts to grow thin films of bismuth. Such films are useful in magnetic sensing applications. We fabricated Hall sensors having thickness of 30 nm and 50 nm of Bismuth using photolithography. Bismuth was deposited on to the surface of GaAs by evaporation teclinique. The properties of these sensors were then studied; dependences of the resistivity, and Hall coefficient on layer thickness were investigated at room temperature. Hall coefficients were calculated under the effect of a magnetic field. Results were then compared with the previously obtained values. Bismuth micro-Hall probes with dimensions as small as »0.25 pm x 0.25 pm produced by Focused Ion Beam (FIB) milling were also presented in this study. Hall coefficient was then calculated.en_US
dc.description.provenanceMade available in DSpace on 2016-01-08T20:17:54Z (GMT). No. of bitstreams: 1 1.pdf: 78510 bytes, checksum: d85492f20c2362aa2bcf4aad49380397 (MD5)en
dc.description.statementofresponsibilityBayer, Gözdeen_US
dc.format.extentix, 50 leaves, illustrations, tables, graphicsen_US
dc.identifier.urihttp://hdl.handle.net/11693/18281
dc.language.isoEnglishen_US
dc.rightsinfo:eu-repo/semantics/openAccessen_US
dc.subjectBismuth Hall Sensorsen_US
dc.subjectelectrical resistivityen_US
dc.subjectHall effecten_US
dc.subjectHall coefficienten_US
dc.subject.lccQC611.H3 B39 2003en_US
dc.subject.lcshDetectors.en_US
dc.subject.lcshHall effect.en_US
dc.subject.lcshBismuth.en_US
dc.titleFabrication and characterization of Bismuth Hall sensors at room temperatureen_US
dc.typeThesisen_US
thesis.degree.disciplinePhysics
thesis.degree.grantorBilkent University
thesis.degree.levelMaster's
thesis.degree.nameMS (Master of Science)

Files

Original bundle
Now showing 1 - 1 of 1
Thumbnail Image
Name:
B075925.pdf
Size:
10.37 MB
Format:
Adobe Portable Document Format
Description:
Full printable version
Download

Collections

Graduate School of Engineering and Science