Field-effect-assisted photoconductivity in PbS films deposited on silicon dioxide
buir.contributor.author | Özbay, Ekmel | |
buir.contributor.orcid | Özbay, Ekmel|0000-0003-2953-1828 | |
dc.citation.epage | 5782 | en_US |
dc.citation.issueNumber | 9 | en_US |
dc.citation.spage | 5782 | en_US |
dc.citation.volumeNumber | 91 | en_US |
dc.contributor.author | Pintilie, L. | en_US |
dc.contributor.author | Pentia, E. | en_US |
dc.contributor.author | Matei, I. | en_US |
dc.contributor.author | Pintilie, I. | en_US |
dc.contributor.author | Özbay, Ekmel | en_US |
dc.date.accessioned | 2015-07-28T11:57:06Z | |
dc.date.available | 2015-07-28T11:57:06Z | |
dc.date.issued | 2002-05-01 | en_US |
dc.department | Department of Physics | en_US |
dc.description.abstract | Lead sulfide (PbS) thin films were deposited from a chemical bath onto SiO2/Si (n-type) substrates. Pseudo-metal-oxide-semiconductor devices were obtained by evaporating source and drain gold electrodes on a PbS surface and aluminum gate electrode on a Si substrate. Field-effect-assisted photoconductivity in the PbS layer was investigated at room temperature, in the 800-2700-nm-wavelength domain for different values and polarities of the drain and gate voltages. The best results were obtained for a positive gate, when both semiconductors are in depletion. An enhancement of about 25% of the photoconductive signal is obtained compared with the case when the gate electrode is absent or is not used. A simple model is proposed that explains the behavior of the dark current and photoconductive signal in PbS film with changing the gate voltage. (C) 2002 American Institute of Physics. | en_US |
dc.description.provenance | Made available in DSpace on 2015-07-28T11:57:06Z (GMT). No. of bitstreams: 1 10.1063-1.1468277.pdf: 337105 bytes, checksum: dd796353cb2ae065c171200c1ea4a9b9 (MD5) | en |
dc.identifier.doi | 10.1063/1.1468277 | en_US |
dc.identifier.issn | 0021-8979 | |
dc.identifier.uri | http://hdl.handle.net/11693/11214 | |
dc.language.iso | English | en_US |
dc.publisher | American Institute of Physics | en_US |
dc.relation.isversionof | http://dx.doi.org/10.1063/1.1468277 | en_US |
dc.source.title | Journal of Applied Physics | en_US |
dc.subject | Thin-films | en_US |
dc.subject | Growth | en_US |
dc.title | Field-effect-assisted photoconductivity in PbS films deposited on silicon dioxide | en_US |
dc.type | Article | en_US |
Files
Original bundle
1 - 1 of 1
Loading...
- Name:
- 10.1063-1.1468277.pdf
- Size:
- 329.2 KB
- Format:
- Adobe Portable Document Format
- Description:
- Full printable version