The effect of insulator layer thickness on the main electrical parameters in (Ni/Au)/AlxGa1-xN/AIN/GaN heterostructures

buir.contributor.orcidÖzbay, Ekmel|0000-0003-2953-1828
dc.citation.epage806en_US
dc.citation.issueNumber6-7en_US
dc.citation.spage803en_US
dc.citation.volumeNumber42en_US
dc.contributor.authorAltindal, S.en_US
dc.contributor.authorŞafak, Y.en_US
dc.contributor.authorTaşçloǧlu I.en_US
dc.contributor.authorÖzbay, Ekmelen_US
dc.date.accessioned2016-02-08T12:24:17Z
dc.date.available2016-02-08T12:24:17Z
dc.date.issued2010en_US
dc.departmentNanotechnology Research Center (NANOTAM)en_US
dc.description.abstract(Ni/Au)Alx Ga1-x N/AlN/GaN(x = 0.22) heterostructures with and without a passivation layer of the SiNx were fabricated in order to see the effect of the insulator layer on the main electrical parameters such as zero-bias barrier height (BH) (φBO), ideality factor (n), series resistance (Rs) of the structure, and the interface state density (Nss). Some of these parameters were determined from both I-V and admittance (C-V and G/ω-V) measurements at room temperature and at 1 MHz and were compared. The experimental results show that the value of N ss in a Schottky contact without passivation is nearly 1 order of magnitude larger than that in a Schottky contact with SiNx passivation layers. Also, the values of Rs increase with the increasing thickness of the passivation layer. In the forward bias region, the negative values of capacitance are an attractive result of this study. This negative capacitance disappears in presence of the passivation layer. Copyright © 2010 John Wiley & Sons, Ltd.en_US
dc.description.provenanceMade available in DSpace on 2016-02-08T12:24:17Z (GMT). No. of bitstreams: 1 bilkent-research-paper.pdf: 70227 bytes, checksum: 26e812c6f5156f83f0e77b261a471b5a (MD5) Previous issue date: 2010en
dc.identifier.doi10.1002/sia.3248en_US
dc.identifier.issn0142-2421
dc.identifier.urihttp://hdl.handle.net/11693/28579
dc.language.isoEnglishen_US
dc.publisherWileyen_US
dc.relation.isversionofhttp://dx.doi.org/10.1002/sia.3248en_US
dc.source.titleSurface and Interface Analysisen_US
dc.subject(Ni/Au)/AlxGa1-xN/AlN/GaN heterostructuresen_US
dc.subjectFrequency dependenceen_US
dc.subjectInterface statesen_US
dc.subjectNegative capacitanceen_US
dc.subjectSeries resistanceen_US
dc.subjectFrequency dependenceen_US
dc.subjectHeterostructuresen_US
dc.subjectInterface stateen_US
dc.subjectNegative capacitanceen_US
dc.subjectSeries resistancesen_US
dc.subjectAluminumen_US
dc.subjectCapacitanceen_US
dc.subjectCrystalsen_US
dc.subjectGalliumen_US
dc.subjectHeterojunctionsen_US
dc.subjectSilicon nitrideen_US
dc.subjectPassivationen_US
dc.titleThe effect of insulator layer thickness on the main electrical parameters in (Ni/Au)/AlxGa1-xN/AIN/GaN heterostructuresen_US
dc.typeArticleen_US

Files

Original bundle

Now showing 1 - 1 of 1
Loading...
Thumbnail Image
Name:
The effect of insulator layer thickness on the main electrical parameters in (NiAu)AlxGa1-xNAINGaN heterostructures.pdf
Size:
201.78 KB
Format:
Adobe Portable Document Format
Description:
Full printable version