Quantum mechanical simulation of charge transport in very small semiconductor structures

Date
1989
Authors
Yalabik, M. C.
Diff, K.
Advisor
Supervisor
Co-Advisor
Co-Supervisor
Instructor
Source Title
IEEE Transactions on Electron Devices
Print ISSN
0018-9383
Electronic ISSN
Publisher
IEEE
Volume
36
Issue
6
Pages
1009 - 1013
Language
English
Type
Article
Journal Title
Journal ISSN
Volume Title
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Abstract

A quantum mechanical simulation method of charge transport in very small semiconductor devices, based on the numerical solution of the time-dependent Schrödinger equation (coupled self-consistently to the Poisson equation to determine the electrostatic potential in the device), is presented. Carrier transport is considered within the effective mass approximation, while the effects of the electron-phonon interaction are included in an approximation that is consistent with the results of the perturbation theory and gives the correct two-point time correlation function. Numerical results for the transient behavior of a planar ultrasubmicrometer three-dimensional GaAs MESFET (gate length of 26 nm) are also presented. They indicate that extremely fast gate-step response times (switching times) characterize such short-channel GaAs devices. © 1989 IEEE

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Keywords
Electrons, Phonons, Quantum theory, Semiconducting gallium arsenide, Transistors, Charge transport, MESFET, Switching times, Very small semiconductor devices, Semiconductor devices
Citation
Published Version (Please cite this version)