Low-temperature photoluminescence study of GaS0.5Se0.5 layered crystals

dc.citation.epage1832en_US
dc.citation.issueNumber10en_US
dc.citation.spage1823en_US
dc.citation.volumeNumber36en_US
dc.contributor.authorAydnl, A.en_US
dc.contributor.authorGasanly, N. M.en_US
dc.contributor.authorGökşen, K.en_US
dc.date.accessioned2016-02-08T10:35:06Z
dc.date.available2016-02-08T10:35:06Z
dc.date.issued2001en_US
dc.departmentDepartment of Physicsen_US
dc.description.abstractPhotoluminescence (PL) spectra of GaS0.5Se0.5 layered single crystals have been studied in the wavelength range of 565-860 nm and in the temperature range of 15-170 K. Two PL bands centered at 585 nm (2.120 eV) and 640 nm (1.938 eV) were observed at T = 15 K. Variations of both bands were studied as a function of excitation laser intensity in the range from 10-3 to 15.9 W cm-2. These bands are attributed to recombination of charge carriers through donor-acceptor pairs located in the band gap. Radiative transitions from shallow donor levels located at 0.029 and 0.040 eV below the bottom of the conduction band to deep acceptor levels located 0.185 and 0.356 eV above the top of the valence band are suggested to be responsible for the observed A- and B-bands in the PL spectra, respectively. A simple energy level diagram explaining the recombination process is proposed.en_US
dc.description.provenanceMade available in DSpace on 2016-02-08T10:35:06Z (GMT). No. of bitstreams: 1 bilkent-research-paper.pdf: 70227 bytes, checksum: 26e812c6f5156f83f0e77b261a471b5a (MD5) Previous issue date: 2001en
dc.identifier.doi10.1016/S0025-5408(01)00635-3en_US
dc.identifier.issn0025-5408
dc.identifier.urihttp://hdl.handle.net/11693/24838
dc.language.isoEnglishen_US
dc.publisherElsevier Scienceen_US
dc.relation.isversionofhttp://dx.doi.org/10.1016/S0025-5408(01)00635-3en_US
dc.source.titleMaterials Research Bulletinen_US
dc.subjectA. Chalcogenidesen_US
dc.subjectA. Semiconductorsen_US
dc.subjectD. Luminescenceen_US
dc.subjectD. Optical Propertiesen_US
dc.subjectCharge carriersen_US
dc.subjectOptical propertiesen_US
dc.subjectPhotoluminescenceen_US
dc.subjectSingle crystalsen_US
dc.subjectChalcogenidesen_US
dc.subjectGallium sulfur selenideen_US
dc.subjectSemiconducting gallium compoundsen_US
dc.titleLow-temperature photoluminescence study of GaS0.5Se0.5 layered crystalsen_US
dc.typeArticleen_US

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