Synthesis of graphene on gold
dc.citation.issueNumber | 18 | en_US |
dc.citation.volumeNumber | 98 | en_US |
dc.contributor.author | Oznuluer, T. | en_US |
dc.contributor.author | Pince, E. | en_US |
dc.contributor.author | Polat, E. O. | en_US |
dc.contributor.author | Balci, O. | en_US |
dc.contributor.author | Salihoglu, O. | en_US |
dc.contributor.author | Kocabas, C. | en_US |
dc.date.accessioned | 2016-02-08T09:53:15Z | |
dc.date.available | 2016-02-08T09:53:15Z | |
dc.date.issued | 2011 | en_US |
dc.department | Department of Physics | en_US |
dc.description.abstract | Here we report chemical vapor deposition of graphene on gold surface at ambient pressure. We studied effects of the growth temperature, pressure, and cooling process on the grown graphene layers. The Raman spectroscopy of the samples reveals the essential properties of the graphene grown on gold surface. In order to characterize the electrical properties of the grown graphene layers, we have transferred them on insulating substrates and fabricated field effect transistors. Owing to distinctive properties of gold, the ability to grow graphene layers on gold surface could open new applications of graphene in electrochemistry and spectroscopy. © 2011 American Institute of Physics. | en_US |
dc.description.provenance | Made available in DSpace on 2016-02-08T09:53:15Z (GMT). No. of bitstreams: 1 bilkent-research-paper.pdf: 70227 bytes, checksum: 26e812c6f5156f83f0e77b261a471b5a (MD5) Previous issue date: 2011 | en |
dc.identifier.doi | 10.1063/1.3584006 | en_US |
dc.identifier.issn | 0003-6951 | |
dc.identifier.uri | http://hdl.handle.net/11693/21932 | |
dc.language.iso | English | en_US |
dc.publisher | A I P Publishing | en_US |
dc.relation.isversionof | http://dx.doi.org/10.1063/1.3584006 | en_US |
dc.source.title | Applied Physics Letters | en_US |
dc.title | Synthesis of graphene on gold | en_US |
dc.type | Article | en_US |
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