Design considerations for MMIC distributed amplifiers

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buir.contributor.orcidAtalar, Abdullah|0000-0002-1903-1240
dc.citation.epage612en_US
dc.citation.spage609en_US
dc.contributor.authorErgun, Şanlıen_US
dc.contributor.authorAtalar, Abdullahen_US
dc.coverage.spatialAntalya, Turkeyen_US
dc.date.accessioned2016-02-08T12:01:26Z
dc.date.available2016-02-08T12:01:26Z
dc.date.issued1994en_US
dc.departmentDepartment of Electrical and Electronics Engineeringen_US
dc.descriptionDate of Conference: 12-14 April 1994en_US
dc.descriptionConference Name: 7th Mediterranean Electrotechnical Conference, MELECON 1994en_US
dc.description.abstractThe bandwidth of the input artificial line in a distributed amplifier is the main band limiting factor. By choosing this impedance properly the bandwidth of a distributed amplifier can be maximized. A four section GaAs MESFET distributed amplifier is designed using this strategy. The fabricated MMIC amplifier gives satisfactory performance. By adding proper length of series transmission lines in the drain side, the gain and the gain flatness of the amplifier can be further improved. This fact is presented via simulation results. The superior gain potential of cascode connected FETs is also demonstrated.en_US
dc.description.provenanceMade available in DSpace on 2016-02-08T12:01:26Z (GMT). No. of bitstreams: 1 bilkent-research-paper.pdf: 70227 bytes, checksum: 26e812c6f5156f83f0e77b261a471b5a (MD5) Previous issue date: 1994en
dc.identifier.doi10.1109/MELCON.1994.381017en_US
dc.identifier.urihttp://hdl.handle.net/11693/27777
dc.language.isoEnglishen_US
dc.publisherIEEEen_US
dc.relation.isversionofhttps://doi.org/10.1109/MELCON.1994.381017en_US
dc.source.titleProceedings of the 7th Mediterranean Electrotechnical Conference, MELECON 1994en_US
dc.subjectAmplificationen_US
dc.subjectCapacitorsen_US
dc.subjectElectric linesen_US
dc.subjectField effect transistorsen_US
dc.subjectMESFET devicesen_US
dc.subjectMonolithic integrated circuitsen_US
dc.subjectNumerical methodsen_US
dc.subjectSemiconducting gallium arsenideen_US
dc.subjectSemiconductor device manufactureen_US
dc.subjectAmplifier design guidelinesen_US
dc.subjectArtificial transmission linesen_US
dc.subjectBand limiting factoren_US
dc.subjectDistributed amplifiersen_US
dc.subjectMicrowave monolithic integrated circuitsen_US
dc.subjectMicrowave amplifiersen_US
dc.titleDesign considerations for MMIC distributed amplifiersen_US
dc.typeConference Paperen_US

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