TEM studies of Ge nanocrystal formation in PECVD grown SiO 2: Ge / SiO2 multilayers

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buir.contributor.authorAydınlı, Atilla
dc.citation.epage5045en_US
dc.citation.issueNumber22en_US
dc.citation.spage5037en_US
dc.citation.volumeNumber18en_US
dc.contributor.authorAǧan, S.en_US
dc.contributor.authorDana, A.en_US
dc.contributor.authorAydınlı, Atillaen_US
dc.date.accessioned2016-02-08T10:19:09Z
dc.date.available2016-02-08T10:19:09Z
dc.date.issued2006en_US
dc.departmentDepartment of Physicsen_US
dc.description.abstractWe investigate the effect of annealing on the Ge nanocrystal formation in multilayered germanosilicate-oxide films grown on Si substrates by plasma enhanced chemical vapour deposition (PECVD). The multilayered samples were annealed at temperatures ranging from 750 to 900 °C for 5 min under nitrogen atmosphere. The onset of formation of Ge nanocrystals, at 750 °C, can be observed via high resolution TEM micrographs. The diameters of Ge nanocrystals were observed to be between 5 and 14 nm. As the annealing temperature is raised to 850 °C, a second layer of Ge nanocrystals forms next to the original precipitation band, positioning itself closer to the substrate SiO2 interface. High resolution cross section TEM images, electron diffraction and electron energy-loss spectroscopy as well as energy-dispersive x-ray analysis (EDAX) data all indicate that Ge nanocrystals are present in each layer. © 2006 IOP Publishing Ltd.en_US
dc.identifier.doi10.1088/0953-8984/18/22/004en_US
dc.identifier.eissn1361-648X
dc.identifier.issn0953-8984
dc.identifier.urihttp://hdl.handle.net/11693/23783
dc.language.isoEnglishen_US
dc.publisherInstitute of Physicsen_US
dc.relation.isversionofhttp://dx.doi.org/10.1088/0953-8984/18/22/004en_US
dc.source.titleJournal of Physics Condensed Matteren_US
dc.subjectElectron diffractionen_US
dc.subjectElectron energy analyzersen_US
dc.subjectFilm growthen_US
dc.subjectGermaniumen_US
dc.subjectMultilayersen_US
dc.subjectNitrogenen_US
dc.subjectPlasma enhanced chemical vapor depositionen_US
dc.subjectSilicon compoundsen_US
dc.subjectTransmission electron microscopyen_US
dc.subjectX ray analysisen_US
dc.subjectElectron energy-loss spectroscopyen_US
dc.subjectGermanosilicate-oxideen_US
dc.subjectMicrographsen_US
dc.subjectNanocrystal formationen_US
dc.subjectNanostructured materialsen_US
dc.titleTEM studies of Ge nanocrystal formation in PECVD grown SiO 2: Ge / SiO2 multilayersen_US
dc.typeArticleen_US

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