Development of AZO TCOs with ALD for HEMT and HJSC solar cell applications

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buir.contributor.authorÖzbay, Ekmel
buir.contributor.orcidÖzbay, Ekmel|0000-0003-2953-1828
dc.citation.epage214en_US
dc.citation.issueNumber1
dc.citation.spage209
dc.citation.volumeNumber26
dc.contributor.authorTugrul, D.
dc.contributor.authorCakmak, H.
dc.contributor.authorÖzbay, Ekmel
dc.contributor.authorImer, B.
dc.date.accessioned2024-03-12T13:44:05Z
dc.date.available2024-03-12T13:44:05Z
dc.date.issued2021-02-11
dc.description.abstractTransparent Conductive Oxide (TCO) films are widely used in optoelectronic devices, such as solar cells, LEDs, and Lasers. Utilization of these contacts directly affects the device efficiencies. Purpose of this study is to produce and optimize properties of Aluminum doped Zinc Oxide (AZO) using a vapor phase technique, Atomic Layer Deposition (ALD) for (n+) a-Si:H surface of silicon Heterojunction Solar Cells (HJSCs) and High Electron Mobility Transistor (HEMT) applications. This study is focused on the effect of the deposition temperature and aluminum atomic concentration on structural, electrical and optical properties of ALD grown AZO ohmic contact films. The results show that as-deposited films have 80-90% transmittance in the visible spectra, low resistance (2.04x10(-3) ohm.cm) and mobility value of 5.25 cm(2)/V.s.
dc.identifier.doi10.2339/politeknik.873160
dc.identifier.eissn2147-9429
dc.identifier.issn1302-0900
dc.identifier.urihttps://hdl.handle.net/11693/114626
dc.language.isoen_US
dc.publisherGazi univ
dc.relation.isversionofhttps://dx.doi.org/10.2339/politeknik.873160
dc.rightsCC BY-SA 4.0 DEED (Attribution-ShareAlike 4.0 International)
dc.rights.urihttps://creativecommons.org/licenses/by-sa/4.0/
dc.source.titleJournal of polytechnic-politeknik dergisi
dc.subjectAtomic layer deposition (ALD)
dc.subjectAluminum doped zinc oxide (AZO)
dc.subjectTransparent conductive oxide (TCO)
dc.subjectNon-alloyed ohmic contacts
dc.subjectGaN HEMT contact
dc.subjectALGAN/GAN HEMT
dc.subjectOHMIC CONTACT
dc.titleDevelopment of AZO TCOs with ALD for HEMT and HJSC solar cell applications
dc.typeArticle

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