Harmonic enhancement of Gunn oscillations in GaN

Date
2005
Advisor
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Instructor
Source Title
AIP Conference Proceedings
Print ISSN
0094-243X
Electronic ISSN
Publisher
American Institute of Physics
Volume
772
Issue
Pages
231 - 232
Language
English
Type
Conference Paper
Journal Title
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Abstract

High field transport in wide bandgap semiconductors like GaN is of great technological importance. The negative differential mobility regime at high fields, under suitable conditions, can lead to millimeter-wave Gunn oscillations. Using extensive simulation based an ensemble Monte Carlo technique, the prospects of GaN Gunn diodes are theoretically investigated. The possibility of operating these Gunn diodes at their higher harmonic modes are explored. Main finding of this research is that the carrier dynamics in GaN can be tailored by an optimum choice of doping profile, temperature and bias conditions so that the efficiency of higher harmonic Gunn oscillations can be boosted.

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Book Title
Keywords
Gunn oscillations, High field transport, Negative differential mobility regime, Monte Carlo technique, Gunn diodes
Citation
Published Version (Please cite this version)