Electronic and optical properties of 4.2 lm‘‘N’’ structured superlattice MWIR photodetectors

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buir.contributor.authorAydınlı, Atilla
dc.citation.epage40en_US
dc.citation.spage36en_US
dc.citation.volumeNumber59en_US
dc.contributor.authorSalihoglu, O.en_US
dc.contributor.authorHostut M.en_US
dc.contributor.authorTansel, T.en_US
dc.contributor.authorKutluer, K.en_US
dc.contributor.authorKilic A.en_US
dc.contributor.authorAlyoruk, M.en_US
dc.contributor.authorSevik, C.en_US
dc.contributor.authorTuran, R.en_US
dc.contributor.authorErgun, Y.en_US
dc.contributor.authorAydınlı, Atillaen_US
dc.date.accessioned2019-01-28T12:52:14Z
dc.date.available2019-01-28T12:52:14Z
dc.date.issued2013-01-05en_US
dc.departmentDepartment of Physicsen_US
dc.description.abstractWe report on the development of a new structure for type II superlattice photodiodes that we call the ‘‘N’’ design. In this new design, we insert an electron barrier between InAs and GaSb in the growth direction. The barrier pushes the electron and hole wavefunctions towards the layer edges and under bias, increases the overlap integral by about 25% leading to higher detectivity. InAs/AlSb/GaSb superlattices were studied with density functional theory. Both AlAs and InSb interfaces were taken into account by calculating the heavy hole–light hole (HH–LH) splittings. Experiments were carried out on single pixel photodiodes by measuring electrical and optical performance. With cut-off wavelength of 4.2 lm at 120 K, temperature dependent dark current and detectivity measurements show that the dark current is 2.5 10 9 A under zero bias with corresponding R0A resistance of 1.5 104 X cm2 for the 500 500 lm2 single pixel square photodetectors. Photodetector reaches BLIP condition at 125 K with the BLIP detectivity (D BLIP) of 2.6 1010 Jones under 300 K background and 0.3 V bias voltage.en_US
dc.description.provenanceSubmitted by Füsun Yurdakul (tutuncu@bilkent.edu.tr) on 2019-01-28T12:52:14Z No. of bitstreams: 1 Electronic_and_optical_properties_of_4.2_mum_N_structured_superlattice_MWIR_photodetectors.pdf: 1689538 bytes, checksum: 2aa65f259f036bcfbf229a7dc3c81d2a (MD5)en
dc.description.provenanceMade available in DSpace on 2019-01-28T12:52:14Z (GMT). No. of bitstreams: 1 Electronic_and_optical_properties_of_4.2_mum_N_structured_superlattice_MWIR_photodetectors.pdf: 1689538 bytes, checksum: 2aa65f259f036bcfbf229a7dc3c81d2a (MD5) Previous issue date: 2013-01-05en
dc.identifier.doi10.1016/j.infrared.2012.12.006en_US
dc.identifier.issn1350-4495
dc.identifier.urihttp://hdl.handle.net/11693/48419
dc.language.isoEnglishen_US
dc.publisherElsevier B.V.en_US
dc.relation.isversionofhttp://dx.doi.org/10.1016/j.infrared.2012.12.006en_US
dc.source.titleInfrared Physics & Technologyen_US
dc.subjectSuperlatticeen_US
dc.subjectBarrier designen_US
dc.subjectN structureen_US
dc.subjectMWIR photodetectoren_US
dc.subjectInfrared detectoren_US
dc.subjectSiO2 passivationen_US
dc.titleElectronic and optical properties of 4.2 lm‘‘N’’ structured superlattice MWIR photodetectorsen_US
dc.typeArticleen_US

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