Effect of the passivation layer on the noise characteristics of mid-wave-infrared InAs / GaSb superlattice photodiodes
buir.contributor.author | Aydınlı, Atilla | |
dc.citation.epage | 792 | en_US |
dc.citation.issueNumber | 9 | en_US |
dc.citation.spage | 790 | en_US |
dc.citation.volumeNumber | 24 | en_US |
dc.contributor.author | Tansel, T. | en_US |
dc.contributor.author | Kutluer, K. | en_US |
dc.contributor.author | Salihoglu, Ö. | en_US |
dc.contributor.author | Aydınlı, Atilla | en_US |
dc.contributor.author | Aslan, B. | en_US |
dc.contributor.author | Arikan, B. | en_US |
dc.contributor.author | Kilinc, M. C. | en_US |
dc.contributor.author | Ergun, Y. | en_US |
dc.contributor.author | Serincan, U. | en_US |
dc.contributor.author | Turan, R. | en_US |
dc.date.accessioned | 2016-02-08T09:47:10Z | |
dc.date.available | 2016-02-08T09:47:10Z | |
dc.date.issued | 2012 | en_US |
dc.department | Department of Physics | en_US |
dc.description.abstract | The authors describe the noise characterization of a mid-wavelength- infrared (MWIR) photodiode based on indium arsenide and gallium antimonide (InAs/GaSb) superlattice (SL), addressing the influence of different passivation layers applied to the surface of the device. The MWIR InAs/GaSb SL design structure is based on p-i-n configuration grown by the molecular beam epitaxy on a (001) n-GaSb substrate. The SiO 2-passivated SL photodiodes demonstrated a Schottky-limited noise up to a bias voltage of -0.1 V where the measured peak responsivity is 1.37 A/W with a cut-off wavelength of 4.9 μm and the specific detectivity as high as 1.23 × 10 12 cm. Hz 1/2 W , demonstrating the high quality of the fabricated MWIR SL photodiodes. The noise measurements exhibited a frequency-dependent plateau (i.e., 1/f noise) for unpassivated and Si 3N 4-passivated samples, whereas 1/f-type noise suppression (i.e., frequency-independent plateau) with a noise current reduction at about 30 Hz of more than one order of magnitude was observed for the SiO 2-passivated ones. | en_US |
dc.description.provenance | Made available in DSpace on 2016-02-08T09:47:10Z (GMT). No. of bitstreams: 1 bilkent-research-paper.pdf: 70227 bytes, checksum: 26e812c6f5156f83f0e77b261a471b5a (MD5) Previous issue date: 2012 | en |
dc.identifier.doi | 10.1109/LPT.2012.2188504 | en_US |
dc.identifier.issn | 1041-1135 | |
dc.identifier.uri | http://hdl.handle.net/11693/21496 | |
dc.language.iso | English | en_US |
dc.publisher | IEEE | en_US |
dc.relation.isversionof | http://dx.doi.org/10.1109/LPT.2012.2188504 | en_US |
dc.source.title | IEEE Photonics Technology Letters | en_US |
dc.subject | InAs/GaSb | en_US |
dc.subject | Mid-wave-infrared photodiode | en_US |
dc.subject | Noise characterization | en_US |
dc.subject | Passivation | en_US |
dc.subject | 1/F noise | en_US |
dc.subject | Cutoff wavelengths | en_US |
dc.subject | Design structure | en_US |
dc.subject | Frequency-dependent | en_US |
dc.subject | Gallium antimonide | en_US |
dc.subject | High quality | en_US |
dc.subject | Noise suppression | en_US |
dc.subject | Passivation layer | en_US |
dc.subject | Peak responsivity | en_US |
dc.subject | Specific detectivity | en_US |
dc.subject | Gallium alloys | en_US |
dc.subject | Infrared radiation | en_US |
dc.subject | Molecular beam epitaxy | en_US |
dc.subject | Photodiodes | en_US |
dc.subject | Superlattices | en_US |
dc.subject | Passivation | en_US |
dc.title | Effect of the passivation layer on the noise characteristics of mid-wave-infrared InAs / GaSb superlattice photodiodes | en_US |
dc.type | Article | en_US |
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