Metal-semiconductor-metal photodetector on as-deposited TiO2 thin films on sapphire substrate

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buir.contributor.authorÖzbay, Ekmel
buir.contributor.orcidÖzbay, Ekmel|0000-0003-2953-1828
dc.citation.epage020606-3en_US
dc.citation.issueNumber2en_US
dc.citation.spage020606-1en_US
dc.citation.volumeNumber31en_US
dc.contributor.authorCaliskan, D.en_US
dc.contributor.authorButun, B.en_US
dc.contributor.authorOzcan, S.en_US
dc.contributor.authorÖzbay, Ekmelen_US
dc.date.accessioned2015-07-28T11:56:09Z
dc.date.available2015-07-28T11:56:09Z
dc.date.issued2013-03-06en_US
dc.departmentDepartment of Physicsen_US
dc.departmentDepartment of Electrical and Electronics Engineeringen_US
dc.departmentNanotechnology Research Center (NANOTAM)en_US
dc.description.abstractTiO2 thin films are prepared on c-plane sapphire substrates by the RF magnetron sputtering method. The performance of the Pt contact metal–semiconductor–metal (MSM) photodetector fabricated on as-deposited films is studied. The dark current density and the responsivity obtained were 1.57 × 10−9 A/cm2 at 5 V bias and 1.73 A/W at 50 V bias, respectively. Breakdown is not observed up to 50 V bias. Rise and fall times for the photocurrent were 7 and 3 s, respectively. Our results show that high quality MSM photodetectors can be fabricated without high temperature and complicated fabrication steps.en_US
dc.identifier.doi10.1116/1.4794526en_US
dc.identifier.eissn2166-2754
dc.identifier.issn2166-2746
dc.identifier.urihttp://hdl.handle.net/11693/10877
dc.language.isoEnglishen_US
dc.publisherAIP Publishing LLCen_US
dc.relation.isversionofhttp://dx.doi.org/10.1116/1.4794526en_US
dc.source.titleJournal of Vacuum Science and Technology Ben_US
dc.subjectPhotodiodesen_US
dc.titleMetal-semiconductor-metal photodetector on as-deposited TiO2 thin films on sapphire substrateen_US
dc.typeArticleen_US

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