Magnetic ground state in FeTe2,VS2, and NiTe2 monolayers: antiparallel magnetic moments at chalcogen atoms

buir.contributor.authorÇıracı, Salim
buir.contributor.orcidÇıracı, Salim|0000-0001-8023-9860
dc.citation.epage054429-11en_US
dc.citation.issueNumber5en_US
dc.citation.spage054429-1en_US
dc.citation.volumeNumber101en_US
dc.contributor.authorAras, M.
dc.contributor.authorKılıç, Ç.
dc.contributor.authorÇıracı, Salim
dc.date.accessioned2021-03-05T17:24:29Z
dc.date.available2021-03-05T17:24:29Z
dc.date.issued2020
dc.departmentDepartment of Physicsen_US
dc.description.abstractOur analysis based on the results of hybrid and semilocal density-functional calculations with and without Hubbard U correction for on-site Coulomb interactions reveals the true magnetic ground states of three transition-metal dichalcogenide monolayers, viz., FeTe2,VS2, and NiTe2, which comprise inhomogeneous magnetic moment configurations. In contrast to earlier studies considering only the magnetic moments of transition-metal atoms, the chalcogen atoms by themselves have significant, antiparallel magnetic moments owing to the spin polarization through p−d hybridization. The latter is found to be true for both H and T phases of FeTe2,VS2, and NiTe2 monolayers. Our predictions show that the FeTe2 monolayer in its lowest-energy structure is a half metal, which prevails under both compressive and tensile strains. Half metallicity occurs also in the FeTe2 bilayer but disappears in thicker multilayers. The VS2 monolayer is a magnetic semiconductor; it has two different band gaps of different character and widths for different spin polarization. The NiTe2 monolayer, which used to be known as a nonmagnetic metal, is indeed a magnetic metal with a small magnetic moment. These monolayers with intriguing electronic and magnetic properties can attain new functionalities for spintronic applications.en_US
dc.identifier.doi10.1103/PhysRevB.101.054429en_US
dc.identifier.issn2469-9950
dc.identifier.urihttp://hdl.handle.net/11693/75855
dc.language.isoEnglishen_US
dc.publisherAmerican Physical Societyen_US
dc.relation.isversionofhttps://dx.doi.org/10.1103/PhysRevB.101.054429en_US
dc.source.titlePhysical Review Ben_US
dc.subjectElectronic structureen_US
dc.subjectExchange interactionen_US
dc.subjectFerrimagnetismen_US
dc.subjectMagnetismen_US
dc.subjectSpin polarizationen_US
dc.subjectSpintronicsen_US
dc.titleMagnetic ground state in FeTe2,VS2, and NiTe2 monolayers: antiparallel magnetic moments at chalcogen atomsen_US
dc.typeArticleen_US

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