Elastic, electronic, and optical properties of NaSnX (X=Sb, Bi, As): first principle calculations

buir.contributor.authorMamedov, Amirullah M.
buir.contributor.authorÖzbay, Ekmel
buir.contributor.authorÖzbay, Ekmel
buir.contributor.orcidÖzbay, Ekmel|0000-0003-2953-1828
dc.citation.spage12011en_US
dc.citation.volumeNumber613en_US
dc.contributor.authorKoç, H.en_US
dc.contributor.authorMamedov, Amirullah M.en_US
dc.contributor.authorÖzbay, Ekmelen_US
dc.coverage.spatialBükk, Hungaryen_US
dc.date.accessioned2020-01-24T08:17:23Z
dc.date.available2020-01-24T08:17:23Z
dc.date.issued2019
dc.departmentNanotechnology Research Center (NANOTAM)en_US
dc.descriptionDate of Conference: October 8-12, 2018en_US
dc.descriptionConference name:5th International Conference on Competitive Materials and Technology Processes, IC-CMTP 2018en_US
dc.description.abstractIn the present work, the structural, mechanical, electronic and optical properties of NaSnX (X=Sb, B, As) compounds have been investigated by means of first principles calculations. The generalized gradient approximation has been used for modeling the exchangecorrelation effects. It has been observed that the calculated lattice parameters are in good agreement with the experimental and theoretical lattice parameters. Bulk modulus, shear modulus, Young's modulus Poisson's ratio, sound velocities and the Debye temperatures using the calculated elastic constants for NaSnSb, NaSnBi and NaSnAs compounds have been obtained. The electronic band structure and the projected density of states corresponding to the electronic band structure have calculated.and interpreted. The obtained electronic band structure for NaSnSb and NaSnBi compounds are metallic in nature, and the NaSnAs compound is also a narrow semiconductor. Based on the obtained electronic structures, we further calculated the frequency-dependent dielectric function, the energy-loss function, optical conductivity, and reflection along the x- and z- axes.en_US
dc.identifier.doi10.1088/1757-899X/613/1/012011en_US
dc.identifier.issn1757-8981
dc.identifier.urihttp://hdl.handle.net/11693/52799
dc.language.isoEnglishen_US
dc.publisherIOPen_US
dc.relation.isversionofhttps://doi.org/10.1088/1757-899X/613/1/012011en_US
dc.source.titleIOP Conference Series: Materials Science and Engineeringen_US
dc.titleElastic, electronic, and optical properties of NaSnX (X=Sb, Bi, As): first principle calculationsen_US
dc.typeConference Paperen_US
relation.isAuthorOfPublication8c1d6866-696d-46a3-a77d-5da690629296

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