Resistive switching mechanism and device applications of ZnO and Ain thin films

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buir.advisorOkyay, Ali Kemal
dc.contributor.authorÖzcan, Ayşe
dc.date.accessioned2016-01-08T18:28:22Z
dc.date.available2016-01-08T18:28:22Z
dc.date.issued2014
dc.departmentGraduate Program in Materials Science and Nanotechnologyen_US
dc.descriptionAnkara : The Department of Material Science and Nanotechnology and The Graduate School of Engineering and Science of Bilkent University, 2014.en_US
dc.descriptionThesis (Master's) -- Bilkent University, 2014.en_US
dc.descriptionIncludes bibliographical references leaves 30-34.en_US
dc.description.abstractResistive switching memories are potential candidates for next generation nonvolatile memory device applications due to natural simplicity in structure, fast switching speed, long retention time, low power consumption, suitability for 3D integration, excellent scalability and CMOS compatibility. However, the atomic scale mechanisms behind resistive switching are still being debated. In this work we investigate resistive switching mechanisms in ZnO and AlN thin films. The structural and physical changes in ZnO thin films during resistive switching are investigated via TEM, EDX, EFTEM techniques. We also investigate application of resisitive switching to reconfigurable optical surfaces. Recently, resistive switching in nitride films such as AlN is attracting increasing attention. The wide band gap, high electrical resistivity, and high thermal conductivity of AlN make it a good candidate for a resistive switching memory device. We report self-compliant resistive switching behavior in AlN films which is deposited by atomic layer deposition.en_US
dc.description.degreeM.S.en_US
dc.description.statementofresponsibilityÖzcan, Ayşeen_US
dc.format.extentxii, 34 leaves, illustrations, graphicsen_US
dc.identifier.urihttp://hdl.handle.net/11693/16002
dc.language.isoEnglishen_US
dc.publisherBilkent Universityen_US
dc.rightsinfo:eu-repo/semantics/openAccessen_US
dc.subjectResistive Switching Memoryen_US
dc.subjectZnOen_US
dc.subjectAlNen_US
dc.subjectTEMen_US
dc.subjectEDXen_US
dc.subject.lccTK7871.96.T45 O93 2014en_US
dc.subject.lcshThin film transistors.en_US
dc.subject.lcshThin films.en_US
dc.subject.lcshZinc oxide.en_US
dc.titleResistive switching mechanism and device applications of ZnO and Ain thin filmsen_US
dc.typeThesisen_US

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Graduate Program in Materials Science and Nanotechnology - Master's degree