High-performance solar-blind AlGaN Schottky photodiodes

buir.contributor.authorÖzbay, Ekmel
buir.contributor.authorBıyıklı, Necmi
buir.contributor.orcidÖzbay, Ekmel|0000-0003-2953-1828
dc.citation.epage6en_US
dc.citation.issueNumber2en_US
dc.citation.spage1en_US
dc.citation.volumeNumber8en_US
dc.contributor.authorBıyıklı, Necmien_US
dc.contributor.authorKartaloglu, T.en_US
dc.contributor.authorAytur, O.en_US
dc.contributor.authorKimukin, I.en_US
dc.contributor.authorÖzbay, Ekmelen_US
dc.date.accessioned2016-02-08T10:28:31Z
dc.date.available2016-02-08T10:28:31Z
dc.date.issued2003en_US
dc.departmentDepartment of Electrical and Electronics Engineeringen_US
dc.departmentDepartment of Physicsen_US
dc.description.abstractHigh-performance solar-blind AlGaN-based Schottky photodiodes have been demonstrated. The detectors were fabricated on MOCVD-grown AlGaN/GaN heterostructures using a microwave-compatible fabrication process. Current-voltage, spectral responsivity, noise, and high-speed characteristics of the detectors were measured and analyzed. Dark currents lower than 1 pA at bias voltages as high as 30 V were obtained. True solar-blind detection was achieved with a cut-off wavelength lower than 266 nm. A peak device responsivity of 78 mA/W at 250 nm was measured under 15 V reverse bias. A visible rejection of more than 4 orders of magnitude was observed. The solar-blind photodiodes exhibited noise densities below the measurement setup noise floor of 3×10 -29 A 2/Hz around 10 KHz. High-speed measurements at the solar-blind wavelength of 267 nm resulted in 3-dB bandwidths as high as 870 MHz.en_US
dc.description.provenanceMade available in DSpace on 2016-02-08T10:28:31Z (GMT). No. of bitstreams: 1 bilkent-research-paper.pdf: 70227 bytes, checksum: 26e812c6f5156f83f0e77b261a471b5a (MD5) Previous issue date: 2003en
dc.identifier.doi10.1557/S1092578300000454en_US
dc.identifier.issn1092-5783
dc.identifier.urihttp://hdl.handle.net/11693/24382
dc.language.isoEnglishen_US
dc.publisherMaterials Research Societyen_US
dc.relation.isversionofhttps://doi.org/10.1557/S1092578300000454en_US
dc.source.titleMRS Internet Journal of Nitride Semiconductor Researchen_US
dc.subjectDecay functionsen_US
dc.subjectHigh speed measurementen_US
dc.subjectSolar blinden_US
dc.subjectWavelengthen_US
dc.subjectBandwidthen_US
dc.subjectCurrent densityen_US
dc.subjectElectric potentialen_US
dc.subjectEpitaxial growthen_US
dc.subjectMicrowavesen_US
dc.subjectSchottky barrier diodesen_US
dc.subjectUltraviolet spectrographsen_US
dc.subjectPhotodiodesen_US
dc.titleHigh-performance solar-blind AlGaN Schottky photodiodesen_US
dc.typeArticleen_US

Files

Original bundle

Now showing 1 - 1 of 1
Loading...
Thumbnail Image
Name:
High-performance solar-blind AlGaN Schottky photodiodes.pdf
Size:
174.07 KB
Format:
Adobe Portable Document Format
Description:
Full printable version