Polar optical phonon scattering and negative Kromer-Esaki-Tsu differential conductivity in bulk GaN

Date
2001-09
Authors
Bulutay, C.
Ridley, B. K.
Zakhleniuk, N. A.
Advisor
Instructor
Source Title
Journal of Crystal Growth
Print ISSN
0022-0248
Electronic ISSN
Publisher
Elsevier
Volume
230
Issue
4-Mar
Pages
462 - 466
Language
English
Type
Article
Journal Title
Journal ISSN
Volume Title
Abstract

GaN is being considered as a viable alternative semiconductor for high-power solid-state electronics. This creates a demand for the characterization of the main scattering channel at high electric fields. The dominant scattering mechanism for carriers reaching high energies under the influence of very high electric fields is the polar optical phonon (POP) emission. To highlight the directional variations, we compute POP emission rates along high-symmetry directions for the zinc-blende and wurtzite crystal phases of GaN. Our treatment relies on the empirical pseudopotential energies and wave functions. The scattering rates are efficiently computed using the Lehmann-Taut Brillouin zone integration technique. For both crystal phases, we also consider the negative differential conductivity possibilities associated with the negative effective mass part of the band structure. (C) 2001 Elsevier Science B.V. All rights reserved.

Course
Other identifiers
Book Title
Keywords
Computer Simulation, Nitrides, Semiconducting Iii-v Materials, High Electron Mobility Transistors
Citation
Published Version (Please cite this version)