X-ray photoelectron spectroscopy for resistance-capacitance measurements of surface structures

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buir.contributor.authorSüzer, Şefik
buir.contributor.orcidAtalar, Abdullah|0000-0002-1903-1240
dc.citation.epage183110-3en_US
dc.citation.issueNumber18en_US
dc.citation.spage183110-1en_US
dc.citation.volumeNumber86en_US
dc.contributor.authorErtas, G.en_US
dc.contributor.authorDemirok, U. K.en_US
dc.contributor.authorAtalar, Abdullahen_US
dc.contributor.authorSüzer, Şefiken_US
dc.date.accessioned2015-07-28T11:57:34Z
dc.date.available2015-07-28T11:57:34Z
dc.date.issued2005-04-29en_US
dc.departmentDepartment of Electrical and Electronics Engineeringen_US
dc.departmentDepartment of Chemistryen_US
dc.description.abstractIn x-ray photoemission measurements, differential charging causes the measured binding energy difference between the Si 2p of the oxide and the silicon substrate to vary nonlinearly as a function of the applied external do voltage stress, which controls the low-energy electrons going into and out of the sample. This nonlinear variation is similar to the system where a gold metal strip is connected to the same voltage stress through an external 10 Mohm series resistor and determined again by x-ray photoelectron spectroscopy (XPS). We utilize this functional resemblance to determine the resistance of the 4 nm SiO2 layer on a silicon substrate as 8 Mohm. In addition, by performing time-dependent XPS measurements (achieved by pulsing the voltage stress), we determine the time constant for charging/discharging of the same system as 2.0 s. Using an equivalent circuit, consisting of a gold metal strip connected through a 10 Mohm series resistor and a 56 nF parallel capacitor, and performing time-dependent XPS measurements, we also determine the time constant as 0.50 s in agreement with the expected value (0.56 s). Using this time constant and the resistance (8.0 Mohm), we can determined the capacitance of the 4 nm SiO2 layer as 250 nF in excellent agreement with the calculated value. Hence, by application of external do and pulsed voltage stresses, an x-ray photoelectron spectrometer is turned into a tool for extracting electrical parameters of surface structures in a noncontact fashion. (c) 2005 American Institute of Physics.en_US
dc.identifier.doi10.1063/1.1919396en_US
dc.identifier.issn0003-6951
dc.identifier.urihttp://hdl.handle.net/11693/11399
dc.language.isoEnglishen_US
dc.publisherAIP Publishingen_US
dc.relation.isversionofhttp://dx.doi.org/10.1063/1.1919396en_US
dc.source.titleApplied Physics Lettersen_US
dc.subjectS?o2/s? systemen_US
dc.subjectHole transporten_US
dc.subjectXpsen_US
dc.titleX-ray photoelectron spectroscopy for resistance-capacitance measurements of surface structuresen_US
dc.typeArticleen_US

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