Investigation of high frequency performance limit of graphene field effect transistors

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buir.contributor.authorPince, Ercag
buir.contributor.authorKocabas, Coşkun
dc.citation.epage3en_US
dc.citation.issueNumber17en_US
dc.citation.spage1en_US
dc.citation.volumeNumber97en_US
dc.contributor.authorPince, Ercagen_US
dc.contributor.authorKocabas, Coşkunen_US
dc.date.accessioned2015-07-28T11:59:30Z
dc.date.available2015-07-28T11:59:30Z
dc.date.issued2010-10en_US
dc.departmentAdvanced Research Laboratories (ARL)
dc.departmentDepartment of Physicsen_US
dc.description.abstractExtremely high field effect mobility together with the high surface coverage makes graphene a promising material for high frequency electronics application. We investigate the intrinsic high frequency performance limit of graphene field effect transistors limited by the charge impurity scattering. The output and transfer characteristics of graphene field effect transistors together with the high frequency performance are characterized as a function of impurity concentration and dielectric constant of the gate insulator. Our results reveal that graphene transistors could provide power gain at radio frequency band.en_US
dc.identifier.doi10.1063/1.3506506en_US
dc.identifier.issn0003-6951
dc.identifier.urihttp://hdl.handle.net/11693/11978
dc.language.isoEnglishen_US
dc.publisherAmerican Institute of Physicsen_US
dc.relation.isversionofhttp://dx.doi.org/10.1063/1.3506506en_US
dc.source.titleApplied Physics Lettersen_US
dc.subjectCharged-impurity scatteringen_US
dc.subjectWalled carbon nanotubesen_US
dc.subjectAligned arraysen_US
dc.subjectLarge-areaen_US
dc.subjectElectronicsen_US
dc.subjectTransporten_US
dc.subjectFilmsen_US
dc.titleInvestigation of high frequency performance limit of graphene field effect transistorsen_US
dc.typeArticleen_US

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