Determination of scattering mechanisms in AlInGaN/GaN heterostructures grown on sapphire substrate

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buir.contributor.authorArslan, Engin
buir.contributor.authorÖzbay, Ekmel
buir.contributor.orcidÖzbay, Ekmel|0000-0003-2953-1828
dc.citation.epage9en_US
dc.citation.spage1en_US
dc.citation.volumeNumber864en_US
dc.contributor.authorSonmez, F.
dc.contributor.authorArslan, Engin
dc.contributor.authorArdali, S.
dc.contributor.authorTiras, E.
dc.contributor.authorÖzbay, Ekmel
dc.date.accessioned2022-02-17T08:33:31Z
dc.date.available2022-02-17T08:33:31Z
dc.date.issued2021-01-27
dc.departmentDepartment of Electrical and Electronics Engineeringen_US
dc.departmentDepartment of Physicsen_US
dc.departmentNanotechnology Research Center (NANOTAM)en_US
dc.description.abstractThe electron mobility limited by different scattering mechanisms in the quaternary AlInGaN alloy grown on a GaN layer is investigated with the classical Hall measurement, which is performed at a temperature range of 12 and 350 K and a magnetic field of B = 0.51 T. The effect of the thickness and alloy composition of the quaternary AlInGaN layer on the mobility is also determined. The experimentally determined temperature-dependent Hall mobility was compared with mobility calculated by using Matthiessen's rule. The main scattering mechanisms, including acoustic phonon scattering (piezoelectric and deformation potential), polar optical phonon scattering, alloy disorder scattering, interface roughness scattering, ionized impurity scattering, dislocation scattering, background impurity scattering, were used in the calculations for all temperatures. The results show that the dominant scattering mechanisms, depending on the investigated sample, are the interface roughness scattering and alloy disorder scattering at almost all temperatures. At a low-temperature, mobility is limited by ionized impurity scattering. High-temperature mobility is limited by polar optical phonon scattering. Furthermore, our results suggest that the thickness and alloy composition of the quaternary AlInGaN layer should be optimized for better transport properties.en_US
dc.embargo.release2023-01-27
dc.identifier.doi10.1016/j.jallcom.2021.158895en_US
dc.identifier.eissn1873-4669
dc.identifier.issn0925-8388
dc.identifier.urihttp://hdl.handle.net/11693/77456
dc.language.isoEnglishen_US
dc.publisherElsevieren_US
dc.relation.isversionofhttps://doi.org/10.1016/j.jallcom.2021.158895en_US
dc.source.titleJournal of Alloys and Compoundsen_US
dc.subjectQuaternary AlInGaN layeren_US
dc.subjectScattering mechanismsen_US
dc.subjectHall effect measurementen_US
dc.titleDetermination of scattering mechanisms in AlInGaN/GaN heterostructures grown on sapphire substrateen_US
dc.typeArticleen_US

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