Experimental study of two-step growth of thin AlN film on 4H-SiC substrate by metalorganic chemical vapor deposition

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buir.contributor.authorÖzbay, Ekmel
buir.contributor.orcidÖzbay, Ekmel|0000-0003-2953-1828
dc.citation.epage2412en_US
dc.citation.issueNumber12en_US
dc.citation.spage2406en_US
dc.citation.volumeNumber12en_US
dc.contributor.authorYu H.en_US
dc.contributor.authorOzturk, M.en_US
dc.contributor.authorDemirel P.en_US
dc.contributor.authorCakmak H.en_US
dc.contributor.authorBuyuklimanli, T.en_US
dc.contributor.authorOu W.en_US
dc.contributor.authorÖzbay, Ekmelen_US
dc.date.accessioned2016-02-08T09:55:45Z
dc.date.available2016-02-08T09:55:45Z
dc.date.issued2010en_US
dc.departmentNanotechnology Research Center (NANOTAM)en_US
dc.departmentDepartment of Physicsen_US
dc.description.abstractWe report growth optimizations of the thin AlN film on (0001) 4H-SiC substrates by metalorganic chemical vapor deposition. The influence of growth conditions, such as growth temperature and the V/III molar ratio, on the material quality of AlN film is studied. The surface morphology and crystalline quality of the epitaxial layers are investigated by atomic force microscope, X-ray diffraction, and transmission electronic microscope. A new approach is demonstrated to improve the crystalline quality of a 100 nm-thick AlN film by the use of a 5 nm-thick low temperature AlN nucleation layer. Compared to a conventional AlN layer directly grown on SiC substrate at high temperature, the surface morphology of two-step AlN film is remarkably improved along with a decreasing of defect density, leading to the improvement of crystalline quality for the subsequently grown GaN layer. The mechanisms of crystalline quality improvement by use of a low temperature AlN nucleation layer are also investigated and discussed.en_US
dc.identifier.issn14544164
dc.identifier.urihttp://hdl.handle.net/11693/22119
dc.language.isoEnglishen_US
dc.source.titleJournal of Optoelectronics and Advanced Materialsen_US
dc.subjectAINen_US
dc.subjectMetalorganic CVDen_US
dc.subjectThin filmen_US
dc.titleExperimental study of two-step growth of thin AlN film on 4H-SiC substrate by metalorganic chemical vapor depositionen_US
dc.typeArticleen_US

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