Structural analysis of an InGaN/GaN based light emitting diode by X-ray diffraction

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buir.contributor.authorÖzbay, Ekmel
buir.contributor.orcidÖzbay, Ekmel|0000-0003-2953-1828
dc.citation.epage191en_US
dc.citation.issueNumber2en_US
dc.citation.spage185en_US
dc.citation.volumeNumber21en_US
dc.contributor.authorÖztürk, M. K.en_US
dc.contributor.authorHongbo, Y.en_US
dc.contributor.authorSarIkavak, B.en_US
dc.contributor.authorKorçak, S.en_US
dc.contributor.authorÖzçelik, S.en_US
dc.contributor.authorÖzbay, Ekmelen_US
dc.date.accessioned2016-02-08T10:00:16Z
dc.date.available2016-02-08T10:00:16Z
dc.date.issued2009-04-18en_US
dc.departmentDepartment of Physicsen_US
dc.departmentNanotechnology Research Center (NANOTAM)en_US
dc.departmentDepartment of Electrical and Electronics Engineeringen_US
dc.description.abstractThe important structural characteristics of hexagonal GaN in an InGaN/GaN multi quantum well, which was aimed to make a light emitted diode and was grown by metalorganic chemical vapor deposition on c-plain sapphire, are determined by using nondestructive high-resolution X-ray diffraction in detail. The distorted GaN layers were described as mosaic crystals characterized by vertical and lateral coherence lengths, a mean tilt, twist, screw and edge type threading dislocation densities. The rocking curves of symmetric (00.l) reflections were used to determine the tilt angle, while the twist angle was an extrapolated grown ω-scan for an asymmetric (hk.l) Bragg reflection with an h or k nonzero. Moreover, it is an important result that the mosaic structure was analyzed from a different (10.l) crystal direction that was the angular inclined plane to the z-axis. The mosaic structure parameters were obtained in an approximately defined ratio depending on the inclination or polar angle of the sample.en_US
dc.identifier.doi10.1007/s10854-009-9891-6en_US
dc.identifier.issn0957-4522
dc.identifier.urihttp://hdl.handle.net/11693/22452
dc.language.isoEnglishen_US
dc.publisherSpringeren_US
dc.relation.isversionofhttp://dx.doi.org/10.1007/s10854-009-9891-6en_US
dc.source.titleJournal of Materials Science: Materials in Electronicsen_US
dc.subjectBragg reflectionen_US
dc.subjectCoherence lengthsen_US
dc.subjectCrystal directionen_US
dc.subjectGaN layersen_US
dc.subjectHexagonal GaNen_US
dc.subjectHigh resolution X ray diffractionen_US
dc.subjectInclined planesen_US
dc.subjectInGaN/GaNen_US
dc.subjectInGaN/GaN multi-quantum wellen_US
dc.subjectMetalorganic chemical vapor depositionen_US
dc.subjectMosaic crystalsen_US
dc.subjectMosaic structureen_US
dc.subjectNon destructiveen_US
dc.subjectPolar anglesen_US
dc.subjectRocking curvesen_US
dc.subjectStructural characteristicsen_US
dc.subjectThreading dislocation densitiesen_US
dc.subjectTilt angleen_US
dc.subjectTwist anglesen_US
dc.subjectEdge dislocationsen_US
dc.subjectGallium alloysen_US
dc.subjectGallium nitrideen_US
dc.subjectLaser opticsen_US
dc.subjectLighten_US
dc.subjectLight emitting diodesen_US
dc.subjectMachineryen_US
dc.subjectPhysical opticsen_US
dc.subjectScrew dislocationsen_US
dc.subjectSemiconductor quantum wellsen_US
dc.subjectStructural analysisen_US
dc.subjectX ray diffractionen_US
dc.subjectX ray diffraction analysisen_US
dc.titleStructural analysis of an InGaN/GaN based light emitting diode by X-ray diffractionen_US
dc.typeArticleen_US

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