Surface recombination noise in InAs / GaSb superlattice photodiodes

Date
2013
Advisor
Instructor
Source Title
Applied Physics Express
Print ISSN
1882-0778
Electronic ISSN
1882-0786
Publisher
IOP Institute of Physics Publishing
Volume
6
Issue
3
Pages
Language
English
Type
Article
Journal Title
Journal ISSN
Volume Title
Abstract

The standard Schottky noise approach alone is not sufficient to describe the noise mechanism in an InAs/GaSb superlattice photodetector at reverse negative bias. The additional noise identified appears at surface activation energies below 60meV and is inversely proportional to the reverse bias. In order to satisfactorily explain the experimental data, we hereby propose the existence of a surface recombination noise that is a function of both the frequency and bias. The calculated noise characteristics indeed show good agreement with the experimental data.

Course
Other identifiers
Book Title
Keywords
Experimental datum, InAs/GaSb superlattices, Negative bias, Noise characteristic, Noise mechanisms, Reverse bias, Surface activation, Surface recombinations, Activation energy, Indium antimonides, Superlattices
Citation
Published Version (Please cite this version)