Trapping centers in undoped GaS layered single crystals
| buir.contributor.author | Aydınlı, Atilla | |
| dc.citation.epage | 606 | en_US |
| dc.citation.issueNumber | 3-4 | en_US |
| dc.citation.spage | 603 | en_US |
| dc.citation.volumeNumber | 77 | en_US |
| dc.contributor.author | Gasanly, N. M. | en_US |
| dc.contributor.author | Aydınlı, Atilla | en_US |
| dc.contributor.author | Yüksek, N. S. | en_US |
| dc.contributor.author | Salihoglu, Ö. | en_US |
| dc.date.accessioned | 2016-02-08T10:29:35Z | |
| dc.date.available | 2016-02-08T10:29:35Z | |
| dc.date.issued | 2003 | en_US |
| dc.department | Department of Physics | en_US |
| dc.description.abstract | Nominally undoped p-GaS layered single crystals were grown using the Bridgman technique. Thermally stimulated current measurements in the temperature range 10-300 K were performed at a heating rate of 0.10 K/s. The analysis of the data revealed six trap levels at 0.05, 0.06, 0.12, 0.63, 0.71, and 0.75 eV. The calculations for these traps yielded 1.2 × 10-21, 2.9 × 10-23, 2.4 × 10-21, 8.0 × 10-9, 1.9 × 10-9 and 4.3 × 10-10 cm2 for the capture cross sections and 1.6 × 1013, 5.0 × 1012, 7.3 × 1012, 1.2 × 1014, 8.9 × 1013 and 2.6 × 1013 cm-3 for the concentrations, respectively. | en_US |
| dc.identifier.doi | 10.1007/s00339-002-2035-y | en_US |
| dc.identifier.issn | 0947-8396 | |
| dc.identifier.uri | http://hdl.handle.net/11693/24449 | |
| dc.language.iso | English | en_US |
| dc.publisher | Springer | en_US |
| dc.relation.isversionof | http://dx.doi.org/10.1007/s00339-002-2035-y | en_US |
| dc.source.title | Applied Physics A: Materials Science and Processing | en_US |
| dc.subject | Calculations | en_US |
| dc.subject | Crystal growth | en_US |
| dc.subject | Electric current measurement | en_US |
| dc.subject | Electron traps | en_US |
| dc.subject | Single crystals | en_US |
| dc.subject | Thermal effects | en_US |
| dc.subject | Bridgman technique | en_US |
| dc.subject | Gallium sulfide | en_US |
| dc.subject | Thermally stimulated current measurements | en_US |
| dc.subject | Trapping centers | en_US |
| dc.subject | Semiconducting gallium compounds | en_US |
| dc.title | Trapping centers in undoped GaS layered single crystals | en_US |
| dc.type | Article | en_US |
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