Strain dependence of photoluminescence and circular dichroism in transition metal dichalcogenides: a k. p analysis

buir.contributor.authorAas, Shahnaz
buir.contributor.authorBulutay, Ceyhun
dc.citation.epage28681en_US
dc.citation.issueNumber22en_US
dc.citation.spage28672en_US
dc.citation.volumeNumber26en_US
dc.contributor.authorAas, Shahnazen_US
dc.contributor.authorBulutay, Ceyhunen_US
dc.date.accessioned2019-02-21T16:07:53Z
dc.date.available2019-02-21T16:07:53Z
dc.date.issued2018en_US
dc.departmentDepartment of Physicsen_US
dc.description.abstractWithin a two-band k p method we analyze different types of strain for the k valley optical characteristics of a freestanding monolayer mos2 Mose2 Ws2 andwse2. we predict that circular polarization selectivity for energies above the direct transition onset deteriorates/improves by tensile/compressive strain. wide range of available strained-sample photoluminescence data can be reasonably reproduced by this simple bandstructure combined with accounting for excitons at a variational level. according to this model strain impacts optoelectronic properties through its hydrostatic component.Whereas the shear strain only causes a rigid wavevector shift of the valley. furthermore Under the stress loading of flexible substrates the presence of poisson's effect or the lack of it are examined individually for the reported measurements.
dc.identifier.doi10.1364/OE.26.028672
dc.identifier.issn1094-4087
dc.identifier.urihttp://hdl.handle.net/11693/50387
dc.language.isoEnglish
dc.publisherOSA - The Optical Society
dc.relation.isversionofhttps://doi.org/10.1364/OE.26.028672
dc.source.titleOptics Expressen_US
dc.titleStrain dependence of photoluminescence and circular dichroism in transition metal dichalcogenides: a k. p analysisen_US
dc.typeArticleen_US

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