X band GaN based MMIC power amplifier with 36.5dBm P1-dB for space applications
buir.contributor.orcid | Özbay, Ekmel|0000-0003-2953-1828 | |
dc.citation.epage | 348 | en_US |
dc.citation.spage | 345 | en_US |
dc.contributor.author | Gürdal, Armağan | en_US |
dc.contributor.author | Yılmaz, Burak Alptuğ | en_US |
dc.contributor.author | Cengiz, Ömer | en_US |
dc.contributor.author | Sen, Özlem | en_US |
dc.contributor.author | Özbay, Ekmel | en_US |
dc.coverage.spatial | Madrid, Spain | en_US |
dc.date.accessioned | 2019-02-21T16:08:35Z | |
dc.date.available | 2019-02-21T16:08:35Z | |
dc.date.issued | 2018 | en_US |
dc.department | Nanotechnology Research Center (NANOTAM) | en_US |
dc.description | Date of Conference: 23-25 Sept. 2018 | en_US |
dc.description.abstract | An X-Band Monolithic Microwave Integrated Circuit (MMIC) High Power Amplifier (HPA) with coplanar waveguide (CPW) based on AlGaN/GaN on SiC technology is presented in this paper. Coplanar waveguide technology (CPW) is chosen for the simplicity and reduced cost of fabrication since CPW process has no via. High Electron Mobility Transistors (HEMTs) are matched for the 8 GHz-8.4GHz frequency band for maximum output power. The Amplifier has a small signal gain over 10 dB, output power of 36.5dBm at 1 dB gain compression point (P1dB) and 40% power added efficiency (PAE) at (PldB) in the desired frequency band (8 GHz-8.4 GHz) with Vds = 30V. | |
dc.description.provenance | Made available in DSpace on 2019-02-21T16:08:35Z (GMT). No. of bitstreams: 1 Bilkent-research-paper.pdf: 222869 bytes, checksum: 842af2b9bd649e7f548593affdbafbb3 (MD5) Previous issue date: 2018 | en |
dc.description.sponsorship | This work is supported by the projects DPT-HAMIT, DPT-FOTON, NATO-SET-193 and TUBITAK under Project Nos., 113E331, 109A015, 109E301. One of the authors (E.O.) also acknowledges partial support from the Turkish Academy of Sciences. | |
dc.identifier.doi | 10.23919/EuMIC.2018.8539888 | |
dc.identifier.isbn | 9782874870521 | |
dc.identifier.uri | http://hdl.handle.net/11693/50421 | |
dc.language.iso | English | |
dc.publisher | IEEE | en_US |
dc.relation.isversionof | https://doi.org/10.23919/EuMIC.2018.8539888 | |
dc.relation.project | Türkiye Bilimler Akademisi, TÜBA - 113E331, 109A015, 109E301 | |
dc.source.title | 2018 13th European Microwave Integrated Circuits Conference (EuMIC) | en_US |
dc.subject | AlGaN/GaN | en_US |
dc.subject | Coplanar waveguide | en_US |
dc.subject | GaN HEMTs | en_US |
dc.subject | MMIC | en_US |
dc.subject | Power amplifier | en_US |
dc.title | X band GaN based MMIC power amplifier with 36.5dBm P1-dB for space applications | en_US |
dc.type | Conference Paper | en_US |
Files
Original bundle
1 - 1 of 1
Loading...
- Name:
- X_Band_GaN_Based_MMIC_Power_Amplifier_with_36.5dBm_P1_dBfor_Space_Applications.pdf
- Size:
- 1.14 MB
- Format:
- Adobe Portable Document Format
- Description:
- Full printable version