X band GaN based MMIC power amplifier with 36.5dBm P1-dB for space applications

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buir.contributor.orcidÖzbay, Ekmel|0000-0003-2953-1828
dc.citation.epage348en_US
dc.citation.spage345en_US
dc.contributor.authorGürdal, Armağanen_US
dc.contributor.authorYılmaz, Burak Alptuğen_US
dc.contributor.authorCengiz, Ömeren_US
dc.contributor.authorSen, Özlemen_US
dc.contributor.authorÖzbay, Ekmelen_US
dc.coverage.spatialMadrid, Spainen_US
dc.date.accessioned2019-02-21T16:08:35Z
dc.date.available2019-02-21T16:08:35Z
dc.date.issued2018en_US
dc.departmentNanotechnology Research Center (NANOTAM)en_US
dc.descriptionDate of Conference: 23-25 Sept. 2018en_US
dc.description.abstractAn X-Band Monolithic Microwave Integrated Circuit (MMIC) High Power Amplifier (HPA) with coplanar waveguide (CPW) based on AlGaN/GaN on SiC technology is presented in this paper. Coplanar waveguide technology (CPW) is chosen for the simplicity and reduced cost of fabrication since CPW process has no via. High Electron Mobility Transistors (HEMTs) are matched for the 8 GHz-8.4GHz frequency band for maximum output power. The Amplifier has a small signal gain over 10 dB, output power of 36.5dBm at 1 dB gain compression point (P1dB) and 40% power added efficiency (PAE) at (PldB) in the desired frequency band (8 GHz-8.4 GHz) with Vds = 30V.
dc.description.sponsorshipThis work is supported by the projects DPT-HAMIT, DPT-FOTON, NATO-SET-193 and TUBITAK under Project Nos., 113E331, 109A015, 109E301. One of the authors (E.O.) also acknowledges partial support from the Turkish Academy of Sciences.
dc.identifier.doi10.23919/EuMIC.2018.8539888
dc.identifier.isbn9782874870521
dc.identifier.urihttp://hdl.handle.net/11693/50421
dc.language.isoEnglish
dc.publisherIEEEen_US
dc.relation.isversionofhttps://doi.org/10.23919/EuMIC.2018.8539888
dc.relation.projectTürkiye Bilimler Akademisi, TÜBA - 113E331, 109A015, 109E301
dc.source.title2018 13th European Microwave Integrated Circuits Conference (EuMIC)en_US
dc.subjectAlGaN/GaNen_US
dc.subjectCoplanar waveguideen_US
dc.subjectGaN HEMTsen_US
dc.subjectMMICen_US
dc.subjectPower amplifieren_US
dc.titleX band GaN based MMIC power amplifier with 36.5dBm P1-dB for space applicationsen_US
dc.typeConference Paperen_US

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