ZnO, TiO² and exotic materials for low temperature thin film electronic devices

Simple item page
buir.advisorOkyay, Ali Kemal
dc.contributor.authorOruç, Feyza Bozkurt
dc.date.accessioned2016-01-08T18:22:41Z
dc.date.available2016-01-08T18:22:41Z
dc.date.issued2012
dc.departmentDepartment of Electrical and Electronics Engineeringen_US
dc.descriptionAnkara : The Department of Electrical and Electronics Engineering and the Institute of Engineering and Science of Bilkent University, 2012.en_US
dc.descriptionThesis (Master's) -- Bilkent University, 2012.en_US
dc.descriptionIncludes bibliographical references.en_US
dc.description.abstractThe metal-oxide-semiconductor field-effect transistor (MOSFET) technology is the core of integrated circuit industry. Nearly all electronic devices around us contain transistors for various purposes like electronic switches, amplifiers or sensors. As the need for more complex and miniature circuits has arisen, scaling down transistor sizes become the top priority. As Moore’s law indicates, number of transistors on integrated circuits doubles every two years but in future fabrication challenges and limitations like quantum effects seen in small devices will block further miniaturization. New growth techniques are required for depositing conformal, high quality films -like high-k dielectrics instead of SiO2- with atomic thickness control to reduce possible problems. Atomic layer deposition techniques are developed to meet these requirements. The field of thin film transistors (TFT), which is a subset of MOSFET’s have first started to be used in flat panel displays but now they are used in various fields, since their functional properties make them powerful candidates for sensor applications. ALD technology is important also for TFT applications since its low temperature growth mechanism allows fabricating TFT’s on various substrates like flexible and/or transparent ones. With ALD technique, transistors can be built even on cloths which makes the dream of e-suits real. In this thesis, thin film transistors are designed and fabricated using atomic layer deposition technique both for channel and dielectric layer growth. Design and fabrication steps of the TFT devices are realized in a cleanroom environment. The fabricated TFT’s are mainly characterized by measuring their current-voltage relations. A parameter analyzer with a probe station is used for such measurements. ALD grown ZnO TFT’s and the effect of growth temperature on performance characteristics are examined. High performance devices having very high Ion/Ioff ratios are fabricated at a temperature low as 80°C. ALD grown TiO2 TFT’s are also fabricated and effects of annealing temperature on device performance are analyzed. This study is, to the best of our knowledge, the first demonstration of TiO2 TFT’s grown by a thermal-ALD system. GaN and pentacene TFT’s are also fabricated and showed promising results. Pentacene TFTs have a special importance since it is a p-type organic semiconductor which gives us the opportunity to work on hybrid organic-inorganic structures. In conclusion, TFT devices based on ALD grown channel and/or dielectric layers show very encouraging results in terms of low cost, low temperature fabrication opportunities and freedom of using any substrate that can handle ALD processing temperature.en_US
dc.description.degreeM.S.en_US
dc.description.statementofresponsibilityOruç, Feyza Bozkurten_US
dc.format.extentxiv, 78 leaves, illustrationsen_US
dc.identifier.urihttp://hdl.handle.net/11693/15662
dc.language.isoEnglishen_US
dc.publisherBilkent Universityen_US
dc.rightsinfo:eu-repo/semantics/openAccessen_US
dc.subjectTFTen_US
dc.subjectALDen_US
dc.subjectZnOen_US
dc.subjectTiO2en_US
dc.subjectAl2O3en_US
dc.subjectpentaceneen_US
dc.subjectGaNen_US
dc.subject.lccTK7871.96.T45 O78 2012en_US
dc.subject.lcshThin film transistors.en_US
dc.subject.lcshThin films.en_US
dc.subject.lcshThin film devices.en_US
dc.titleZnO, TiO² and exotic materials for low temperature thin film electronic devicesen_US
dc.typeThesisen_US

Files

Original bundle
Now showing 1 - 1 of 1
Thumbnail Image
Name:
0006380.pdf
Size:
2.43 MB
Format:
Adobe Portable Document Format
Download

Collections

Dept. of Electrical and Electronics Engineering - Master's degree