Structural, elastic, and electronic properties of topological insulators: Sb2Te3 and Bi2Te3

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buir.contributor.orcidÖzbay, Ekmel|0000-0003-2953-1828
dc.citation.epage44en_US
dc.citation.spage41en_US
dc.contributor.authorKoc H.en_US
dc.contributor.authorMamedov, Amirullah M.en_US
dc.contributor.authorÖzbay, Ekmelen_US
dc.coverage.spatialPrague, Czech Republicen_US
dc.date.accessioned2016-02-08T12:10:07Z
dc.date.available2016-02-08T12:10:07Z
dc.date.issued2013en_US
dc.departmentNanotechnology Research Center (NANOTAM)en_US
dc.descriptionDate of Conference: 21-25 July 2013en_US
dc.description.abstractWe have performed a first principles study of structural, elastic, and electronic properties of rhombohedral Sb2Te3 and Bi 2Te3 compounds using the density functional theory within the local density approximation. The lattice parameters of considered compounds have been calculated. The second-order elastic constants have been calculated, and the other related quantities such as the Young's modulus, shear modulus, Poisson's ratio, anisotropy factor, sound velocities, and Debye temperature have also been estimated in the present work. The calculated electronic band structure shows that Sb2Te3 and Bi2Te 3 compounds have a direct forbidden band gap. Our structural estimation and some other results are in agreement with the available experimental and theoretical data. © 2013 IEEE.en_US
dc.description.provenanceMade available in DSpace on 2016-02-08T12:10:07Z (GMT). No. of bitstreams: 1 bilkent-research-paper.pdf: 70227 bytes, checksum: 26e812c6f5156f83f0e77b261a471b5a (MD5) Previous issue date: 2013en
dc.identifier.doi10.1109/ISAF.2013.6748739en_US
dc.identifier.urihttp://hdl.handle.net/11693/28065
dc.language.isoEnglishen_US
dc.publisherIEEEen_US
dc.relation.isversionofhttp://dx.doi.org/10.1109/ISAF.2013.6748739en_US
dc.source.title2013 Joint IEEE International Symposium on Applications of Ferroelectric and Workshop on Piezoresponse Force Microscopy (ISAF/PFM)en_US
dc.subjectab initio calculationen_US
dc.subjectelectronic structureen_US
dc.subjectmechanical propertiesen_US
dc.subjectAntimony compoundsen_US
dc.subjectElastic modulien_US
dc.subjectElectronic propertiesen_US
dc.subjectElectronic structureen_US
dc.subjectFerroelectricityen_US
dc.subjectLocal density approximationen_US
dc.subjectMechanical propertiesen_US
dc.subjectScanning probe microscopyen_US
dc.subjectAb initio calculationsen_US
dc.subjectAnisotropy factoren_US
dc.subjectElectronic band structureen_US
dc.subjectFirst-principles studyen_US
dc.subjectPoisson's ratioen_US
dc.subjectStructural estimationen_US
dc.subjectTopological insulatorsen_US
dc.subjectYoung's Modulusen_US
dc.subjectBismuth compoundsen_US
dc.titleStructural, elastic, and electronic properties of topological insulators: Sb2Te3 and Bi2Te3en_US
dc.typeConference Paperen_US

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