Structural, elastic, and electronic properties of topological insulators: Sb2Te3 and Bi2Te3
buir.contributor.orcid | Özbay, Ekmel|0000-0003-2953-1828 | |
dc.citation.epage | 44 | en_US |
dc.citation.spage | 41 | en_US |
dc.contributor.author | Koc H. | en_US |
dc.contributor.author | Mamedov, Amirullah M. | en_US |
dc.contributor.author | Özbay, Ekmel | en_US |
dc.coverage.spatial | Prague, Czech Republic | en_US |
dc.date.accessioned | 2016-02-08T12:10:07Z | |
dc.date.available | 2016-02-08T12:10:07Z | |
dc.date.issued | 2013 | en_US |
dc.department | Nanotechnology Research Center (NANOTAM) | en_US |
dc.description | Date of Conference: 21-25 July 2013 | en_US |
dc.description.abstract | We have performed a first principles study of structural, elastic, and electronic properties of rhombohedral Sb2Te3 and Bi 2Te3 compounds using the density functional theory within the local density approximation. The lattice parameters of considered compounds have been calculated. The second-order elastic constants have been calculated, and the other related quantities such as the Young's modulus, shear modulus, Poisson's ratio, anisotropy factor, sound velocities, and Debye temperature have also been estimated in the present work. The calculated electronic band structure shows that Sb2Te3 and Bi2Te 3 compounds have a direct forbidden band gap. Our structural estimation and some other results are in agreement with the available experimental and theoretical data. © 2013 IEEE. | en_US |
dc.description.provenance | Made available in DSpace on 2016-02-08T12:10:07Z (GMT). No. of bitstreams: 1 bilkent-research-paper.pdf: 70227 bytes, checksum: 26e812c6f5156f83f0e77b261a471b5a (MD5) Previous issue date: 2013 | en |
dc.identifier.doi | 10.1109/ISAF.2013.6748739 | en_US |
dc.identifier.uri | http://hdl.handle.net/11693/28065 | |
dc.language.iso | English | en_US |
dc.publisher | IEEE | en_US |
dc.relation.isversionof | http://dx.doi.org/10.1109/ISAF.2013.6748739 | en_US |
dc.source.title | 2013 Joint IEEE International Symposium on Applications of Ferroelectric and Workshop on Piezoresponse Force Microscopy (ISAF/PFM) | en_US |
dc.subject | ab initio calculation | en_US |
dc.subject | electronic structure | en_US |
dc.subject | mechanical properties | en_US |
dc.subject | Antimony compounds | en_US |
dc.subject | Elastic moduli | en_US |
dc.subject | Electronic properties | en_US |
dc.subject | Electronic structure | en_US |
dc.subject | Ferroelectricity | en_US |
dc.subject | Local density approximation | en_US |
dc.subject | Mechanical properties | en_US |
dc.subject | Scanning probe microscopy | en_US |
dc.subject | Ab initio calculations | en_US |
dc.subject | Anisotropy factor | en_US |
dc.subject | Electronic band structure | en_US |
dc.subject | First-principles study | en_US |
dc.subject | Poisson's ratio | en_US |
dc.subject | Structural estimation | en_US |
dc.subject | Topological insulators | en_US |
dc.subject | Young's Modulus | en_US |
dc.subject | Bismuth compounds | en_US |
dc.title | Structural, elastic, and electronic properties of topological insulators: Sb2Te3 and Bi2Te3 | en_US |
dc.type | Conference Paper | en_US |
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