Experimental and theoretical investigation of phosphorus in-situ doping of germanium epitaxial layers

Date
2013
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Source Title
Current Applied Physics
Print ISSN
1567-1739
Electronic ISSN
Publisher
Elsevier
Volume
13
Issue
6
Pages
1060 - 1063
Language
English
Type
Article
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Abstract

We investigate phosphorus in-situ doping characteristics in germanium (Ge) during epitaxial growth by spreading resistance profiling analysis. In addition, we present an accurate model for the kinetics of the diffusion in the in-situ process, modeling combined growth and diffusion events. The activation energy and pre-exponential factor for phosphorus (P) diffusion are determined to be 1.91 eV and 3.75 × 10-5 cm2/s. These results show that P in-situ doping diffusivity is low enough to form shallow junctions for high performance Ge devices.

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Keywords
Activation energy, Diffusivity, Germanium, In-situ, Phosphorus, Germaniums (Ge), In-situ, In-situ doping, In-situ process, Preexponential factor, Shallow junction, Spreading resistance profiling, Theoretical investigations, Activation energy, Diffusion, Epitaxial growth, Growth kinetics, Phosphorus, Semiconductor doping, Germanium
Citation
Published Version (Please cite this version)