Confined-phonon effects in the band-gap renormalization of semiconductor quantum wires

Simple item page
buir.contributor.authorTanatar, Bilal
buir.contributor.orcidTanatar, Bilal|0000-0002-5246-0119
dc.citation.epage3999en_US
dc.citation.issueNumber7en_US
dc.citation.spage3994en_US
dc.citation.volumeNumber57en_US
dc.contributor.authorBennett, C. R.en_US
dc.contributor.authorGüven, K.en_US
dc.contributor.authorTanatar, Bilalen_US
dc.date.accessioned2016-02-08T10:45:46Z
dc.date.available2016-02-08T10:45:46Z
dc.date.issued1998en_US
dc.departmentDepartment of Physicsen_US
dc.description.abstractWe calculate the band-gap renormalization in quasi-one-dimensional semiconductor quantum wires including carrier-carrier and carrier-phonon interactions. We use the quasistatic approximation to obtain the self-energies at the band edge that define the band-gap renormalization. The random-phase approximation at finite temperature is employed to describe the screening effects. We find that confined LO-phonon modes through their interaction with the electrons and holes modify the band gap significantly and produce a larger value than the static ∈0 approximation.en_US
dc.identifier.doi10.1103/PhysRevB.57.3994en_US
dc.identifier.issn0163-1829
dc.identifier.urihttp://hdl.handle.net/11693/25498
dc.language.isoEnglishen_US
dc.publisherAmerican Physical Societyen_US
dc.relation.isversionofhttps://doi.org/10.1103/PhysRevB.57.3994en_US
dc.source.titlePhysical Review B - Condensed Matter and Materials Physicsen_US
dc.titleConfined-phonon effects in the band-gap renormalization of semiconductor quantum wiresen_US
dc.typeArticleen_US

Files

Original bundle
Now showing 1 - 1 of 1
Thumbnail Image
Name:
Confined-phonon effects in the band-gap renormalization of semiconductor quantum wires.pdf
Size:
106.99 KB
Format:
Adobe Portable Document Format
Description:
Full printable version
Download

Collections

Department of Physics