High performance 15-μm pitch 640 × 512 MWIR InAs/GaSb type-II superlattice sensors

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buir.contributor.authorOğuz, Fikri
buir.contributor.authorBek, Alpan
buir.contributor.authorÖzbay, Ekmel
buir.contributor.orcidOğuz, Fikri|0000-0002-5443-3472
buir.contributor.orcidBek, Alpan|0000-0002-0190-7945
buir.contributor.orcidÖzbay, Ekmel|0000-0003-2953-1828
dc.citation.epage4200106 / 6en_US
dc.citation.issueNumber1en_US
dc.citation.spage4200106 / 1en_US
dc.citation.volumeNumber58en_US
dc.contributor.authorOğuz, Fikri
dc.contributor.authorÜlker, E.
dc.contributor.authorArslan, Y.
dc.contributor.authorNuzumlali, Ö. L.
dc.contributor.authorBek, Alpan
dc.contributor.authorÖzbay, Ekmel
dc.date.accessioned2022-01-26T07:06:10Z
dc.date.available2022-01-26T07:06:10Z
dc.date.issued2021-11-18
dc.departmentDepartment of Electrical and Electronics Engineeringen_US
dc.departmentDepartment of Physicsen_US
dc.departmentInstitute of Materials Science and Nanotechnology (UNAM)en_US
dc.departmentNanotechnology Research Center (NANOTAM)en_US
dc.description.abstractWe report the high performance of Mid-wave Infrared Region (MWIR) InAs/GaSb Type-II Superlattice (T2SL) sensors with $640\times512$ format and 15- $\mu \text{m}$ pixel pitch at both Focal Plane Array (FPA) and pixel level. The p-intrinsic-Barrier-n epilayer structure is adopted for this study, which is grown on 620 ± $30~ \mu \text{m}$ thick GaSb substrate and highly-doped GaSb cap layer at the top structure. The mesa type pixels with sizes of $220\,\,\mu \text{m}\,\,\times 220\,\,\mu \text{m}$ have dark currents $7.8\times10$ −12 A at 77 K both of which are equivalent to state-of-the-art values for Type-II Superlattice sensors. The various passivation techniques to lower the dark current are applied and the results are given in terms of dark current. Electro-optical measurements yielded comparable results to literature. After gathering data and optimizing the fabrication conditions, the FPA of 15- $\mu \text{m}$ pitch having $4.92~ \mu \text{m}$ cut-off wavelength ( $\lambda _{\mathrm {c}}$ ) shows 1.6 A/W peak responsivity, Noise Equivalent Temperature Difference (NETD) of 22.6 mK with optics of f/2.3, quantum efficiency larger than 65% and 99.75% operability. The acquired images by using aforementioned FPA device is presented in this paper. With the reduction of dark current, an encouraging imaging performance is obtained which shows the potential of the Type-II Superlattice detectors in 3 rd generation infrared sensors.en_US
dc.description.provenanceSubmitted by Evrim Ergin (eergin@bilkent.edu.tr) on 2022-01-26T07:06:10Z No. of bitstreams: 1 High_performance_15-μm_pitch_640x512_MWIR_InAs-GaSb_type-II_superlattice_sensors.pdf: 1602823 bytes, checksum: aee45c72556656d878d26bc684363af9 (MD5)en
dc.description.provenanceMade available in DSpace on 2022-01-26T07:06:10Z (GMT). No. of bitstreams: 1 High_performance_15-μm_pitch_640x512_MWIR_InAs-GaSb_type-II_superlattice_sensors.pdf: 1602823 bytes, checksum: aee45c72556656d878d26bc684363af9 (MD5) Previous issue date: 2021-11-18en
dc.identifier.doi10.1109/JQE.2021.3129535en_US
dc.identifier.eissn1558-1713
dc.identifier.issn0018-9197
dc.identifier.urihttp://hdl.handle.net/11693/76784
dc.language.isoEnglishen_US
dc.publisherIEEEen_US
dc.relation.isversionofhttps://doi.org/10.1109/JQE.2021.3129535en_US
dc.source.titleIEEE Journal of Quantum Electronicsen_US
dc.subjectInfrared photodetectorsen_US
dc.subjectFocal plane arrayen_US
dc.subjectMWIRen_US
dc.subjectInAs/GaSben_US
dc.subjectType-II superlatticeen_US
dc.titleHigh performance 15-μm pitch 640 × 512 MWIR InAs/GaSb type-II superlattice sensorsen_US
dc.typeArticleen_US

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