On the interface states and series resistance profiles of (Ni/Au)-Al 0.22Ga0.78N/AlN/GaN heterostructures before and after 60Co (γ-ray) irradiation

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buir.contributor.authorÖzbay, Ekmel
buir.contributor.orcidÖzbay, Ekmel|0000-0003-2953-1828
dc.citation.epage929en_US
dc.citation.issueNumber12en_US
dc.citation.spage920en_US
dc.citation.volumeNumber165en_US
dc.contributor.authorDemirezen, S.en_US
dc.contributor.authorAltndal, S.en_US
dc.contributor.authorÖzçelik, S.en_US
dc.contributor.authorÖzbay, Ekmelen_US
dc.date.accessioned2016-02-08T09:55:51Z
dc.date.available2016-02-08T09:55:51Z
dc.date.issued2010-06-09en_US
dc.departmentNanotechnology Research Center (NANOTAM)en_US
dc.departmentDepartment of Physicsen_US
dc.departmentDepartment of Electrical and Electronics Engineeringen_US
dc.description.abstractThe values of interface states (NSS) and series resistance (RS) of (Ni/Au)-Al0.22Ga0.78N/AlN/GaN heterostructures were obtained from admittance and current-voltage measurements before and after 250kGy 60Co irradiation. The analyses of these data indicate that the values of capacitance and conductance decrease, as the R S increases with increasing dose rate due to the generation of N SS. The increase in RS with increasing dose rate was attributed to two main models. According to the first model, it has been attributed to a direct decrease in the donor concentration in semiconductor material as a result of the elimination of shallow donor states. According to the second model, it is a result of irradiation because of the formation of deep acceptor centers in the semiconductor bulk, and electrons from the shallow donor centers are captured by these acceptors.en_US
dc.description.provenanceMade available in DSpace on 2016-02-08T09:55:51Z (GMT). No. of bitstreams: 1 bilkent-research-paper.pdf: 70227 bytes, checksum: 26e812c6f5156f83f0e77b261a471b5a (MD5) Previous issue date: 2010en
dc.identifier.doi10.1080/10420150.2010.487905en_US
dc.identifier.eissn1029-4953
dc.identifier.issn1042-0150
dc.identifier.urihttp://hdl.handle.net/11693/22127
dc.language.isoEnglishen_US
dc.publisherTaylor and Francisen_US
dc.relation.isversionofhttp://dx.doi.org/10.1080/10420150.2010.487905en_US
dc.source.titleRadiation Effects and Defects in Solidsen_US
dc.subjectAdmittance techniqueen_US
dc.subjectI-V measurementsen_US
dc.subjectInterface statesen_US
dc.subjectRadiation effecten_US
dc.subjectSeries resistanceen_US
dc.titleOn the interface states and series resistance profiles of (Ni/Au)-Al 0.22Ga0.78N/AlN/GaN heterostructures before and after 60Co (γ-ray) irradiationen_US
dc.typeArticleen_US

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