Effects of thermal annealing on the morphology of the AlxGa(1x)N films

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buir.contributor.authorÖzbay, Ekmel
buir.contributor.orcidÖzbay, Ekmel|0000-0003-2953-1828
dc.citation.epage242en_US
dc.citation.issueNumber6en_US
dc.citation.spage238en_US
dc.citation.volumeNumber12en_US
dc.contributor.authorCorekci, S.en_US
dc.contributor.authorTekeli, Z.en_US
dc.contributor.authorCakmak, M.en_US
dc.contributor.authorOzcelik, S.en_US
dc.contributor.authorDinc, Y.en_US
dc.contributor.authorZeybek, O.en_US
dc.contributor.authorÖzbay, Ekmelen_US
dc.date.accessioned2015-07-28T11:59:10Z
dc.date.available2015-07-28T11:59:10Z
dc.date.issued2010-01-08en_US
dc.departmentDepartment of Physicsen_US
dc.departmentDepartment of Electrical and Electronics Engineeringen_US
dc.departmentNanotechnology Research Center (NANOTAM)en_US
dc.description.abstractEffects of thermal annealing on the morphology of the AlxGa(1-x)N films with two different high Al-contents (x=0.43 and 0.52) have been investigated by atomic force microscopy (AFM). The annealing treatments were performed in a nitrogen (N-2) gas ambient as short-time (4 min) and long-time (30 min). Firstly, the films were annealed as short-time in the range of 800-950 degrees C in steps of 50-100 degrees C. The surface root-mean-square (rms) roughness of the films reduced with increasing temperature at short-time annealing (up to 900 degrees C), while their surface morphologies were not changed. At the same time, the degradation appeared on the surface of the film with lower Al-content after 950 degrees C. Secondly, the Al0.43Ga0.57N film was annealed as long-time in the range of 1000-1200 degrees C in steps of 50 degrees C. The surface morphology and rms roughness of the film with increasing temperature up to 1150 degrees C did not significantly change. Above those temperatures, the surface morphology changed from step-flow to grain-like and the rms roughness significantly increased.en_US
dc.identifier.doi10.1016/j.mssp.2009.12.004en_US
dc.identifier.issn1369-8001
dc.identifier.urihttp://hdl.handle.net/11693/11883
dc.language.isoEnglishen_US
dc.publisherElsevieren_US
dc.relation.isversionofhttp://dx.doi.org/10.1016/j.mssp.2009.12.004en_US
dc.source.titleMaterials Science in Semiconductor Processingen_US
dc.subjectMorphology of filmsen_US
dc.subjectAtomic force microscopeen_US
dc.titleEffects of thermal annealing on the morphology of the AlxGa(1x)N filmsen_US
dc.typeArticleen_US

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Department of Electrical and Electronics Engineering
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