High-performance solar-blind photodetectors based on AlxGa 1_xN heterostructures

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buir.contributor.authorÖzbay, Ekmel
buir.contributor.authorBıyıklı, Necmi
buir.contributor.orcidÖzbay, Ekmel|0000-0003-2953-1828
dc.citation.epage751en_US
dc.citation.issueNumber4en_US
dc.citation.spage742en_US
dc.citation.volumeNumber10en_US
dc.contributor.authorÖzbay, Ekmelen_US
dc.contributor.authorBıyıklı, Necmien_US
dc.contributor.authorKimukin, I.en_US
dc.contributor.authorKartaloglu, T.en_US
dc.contributor.authorTut, T.en_US
dc.contributor.authorAytür, O.en_US
dc.date.accessioned2016-02-08T10:26:32Z
dc.date.available2016-02-08T10:26:32Z
dc.date.issued2004en_US
dc.departmentDepartment of Physicsen_US
dc.departmentDepartment of Electrical and Electronics Engineeringen_US
dc.description.abstractDesign, fabrication, and characterization of high-performance AI xGa1-xN-based photodetectors for solar-blind applications are reported. AlxGa1-xN heterostructures were designed for Schottky. p-i-n, and metal-semicondnctor-metal (MSM) photodiodes. The solar-blind photodiode samples were fabricated using a microwave compatible fabrication process. The resulting devices exhibited extremely low dark currents. Below 3 fA, leakage currents at 6-V reverse bias were measured on p-i-n samples. The excellent current-voltage (I-V) characteristics led to a detectivity performance of 4.9×1014 cmHz1/2W -1. The MSM devices exhibited photoconductive gain, while Schottky and p-i-n samples displayed 0.09 and 0.11 A/W peak responsivity values at 267 and 261 nm, respectively. A visible rejection of 2×104 was achieved with Schottky samples. High-speed measurements at 267 nm resulted in fast pulse responses with greater than gigahertz bandwidths. The fastest devices were MSM photodiodes with a maximum 3-dB bandwidth of 5.4 GHz.en_US
dc.description.provenanceMade available in DSpace on 2016-02-08T10:26:32Z (GMT). No. of bitstreams: 1 bilkent-research-paper.pdf: 70227 bytes, checksum: 26e812c6f5156f83f0e77b261a471b5a (MD5) Previous issue date: 2004en
dc.identifier.doi10.1109/JSTQE.2004.831681en_US
dc.identifier.issn1077-260X
dc.identifier.urihttp://hdl.handle.net/11693/24262
dc.language.isoEnglishen_US
dc.publisherIEEEen_US
dc.relation.isversionofhttp://dx.doi.org/10.1109/JSTQE.2004.831681en_US
dc.source.titleIEEE Journal on Selected Topics in Quantum Electronicsen_US
dc.subjectAlganen_US
dc.subjectDetectivityen_US
dc.subjectHeterustructureen_US
dc.subjectHigh speeden_US
dc.subjectMetal-semiconductor-metal (MSM)en_US
dc.subjectP-i-nen_US
dc.subjectPhotodetectoren_US
dc.subjectSchottkyen_US
dc.subjectSolar blinden_US
dc.subjectUltravioleten_US
dc.subjectBandwidthen_US
dc.subjectElectric currentsen_US
dc.subjectFabricationen_US
dc.subjectPhotoconductivityen_US
dc.subjectPhotodetectorsen_US
dc.subjectPhotodiodesen_US
dc.subjectSemiconducting aluminum compoundsen_US
dc.subjectSemiconducting gallium compoundsen_US
dc.subjectSolar energyen_US
dc.subjectVoltage measurementen_US
dc.subjectAlGaNen_US
dc.subjectDetectivityen_US
dc.subjectHigh speeden_US
dc.subjectMetal-semiconductor-metal (MSM)en_US
dc.subjectSolar blinden_US
dc.subjectHeterojunctionsen_US
dc.titleHigh-performance solar-blind photodetectors based on AlxGa 1_xN heterostructuresen_US
dc.typeArticleen_US

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