High-performance solar-blind photodetectors based on AlxGa 1_xN heterostructures
buir.contributor.author | Özbay, Ekmel | |
buir.contributor.author | Bıyıklı, Necmi | |
buir.contributor.orcid | Özbay, Ekmel|0000-0003-2953-1828 | |
dc.citation.epage | 751 | en_US |
dc.citation.issueNumber | 4 | en_US |
dc.citation.spage | 742 | en_US |
dc.citation.volumeNumber | 10 | en_US |
dc.contributor.author | Özbay, Ekmel | en_US |
dc.contributor.author | Bıyıklı, Necmi | en_US |
dc.contributor.author | Kimukin, I. | en_US |
dc.contributor.author | Kartaloglu, T. | en_US |
dc.contributor.author | Tut, T. | en_US |
dc.contributor.author | Aytür, O. | en_US |
dc.date.accessioned | 2016-02-08T10:26:32Z | |
dc.date.available | 2016-02-08T10:26:32Z | |
dc.date.issued | 2004 | en_US |
dc.department | Department of Physics | en_US |
dc.department | Department of Electrical and Electronics Engineering | en_US |
dc.description.abstract | Design, fabrication, and characterization of high-performance AI xGa1-xN-based photodetectors for solar-blind applications are reported. AlxGa1-xN heterostructures were designed for Schottky. p-i-n, and metal-semicondnctor-metal (MSM) photodiodes. The solar-blind photodiode samples were fabricated using a microwave compatible fabrication process. The resulting devices exhibited extremely low dark currents. Below 3 fA, leakage currents at 6-V reverse bias were measured on p-i-n samples. The excellent current-voltage (I-V) characteristics led to a detectivity performance of 4.9×1014 cmHz1/2W -1. The MSM devices exhibited photoconductive gain, while Schottky and p-i-n samples displayed 0.09 and 0.11 A/W peak responsivity values at 267 and 261 nm, respectively. A visible rejection of 2×104 was achieved with Schottky samples. High-speed measurements at 267 nm resulted in fast pulse responses with greater than gigahertz bandwidths. The fastest devices were MSM photodiodes with a maximum 3-dB bandwidth of 5.4 GHz. | en_US |
dc.description.provenance | Made available in DSpace on 2016-02-08T10:26:32Z (GMT). No. of bitstreams: 1 bilkent-research-paper.pdf: 70227 bytes, checksum: 26e812c6f5156f83f0e77b261a471b5a (MD5) Previous issue date: 2004 | en |
dc.identifier.doi | 10.1109/JSTQE.2004.831681 | en_US |
dc.identifier.issn | 1077-260X | |
dc.identifier.uri | http://hdl.handle.net/11693/24262 | |
dc.language.iso | English | en_US |
dc.publisher | IEEE | en_US |
dc.relation.isversionof | http://dx.doi.org/10.1109/JSTQE.2004.831681 | en_US |
dc.source.title | IEEE Journal on Selected Topics in Quantum Electronics | en_US |
dc.subject | Algan | en_US |
dc.subject | Detectivity | en_US |
dc.subject | Heterustructure | en_US |
dc.subject | High speed | en_US |
dc.subject | Metal-semiconductor-metal (MSM) | en_US |
dc.subject | P-i-n | en_US |
dc.subject | Photodetector | en_US |
dc.subject | Schottky | en_US |
dc.subject | Solar blind | en_US |
dc.subject | Ultraviolet | en_US |
dc.subject | Bandwidth | en_US |
dc.subject | Electric currents | en_US |
dc.subject | Fabrication | en_US |
dc.subject | Photoconductivity | en_US |
dc.subject | Photodetectors | en_US |
dc.subject | Photodiodes | en_US |
dc.subject | Semiconducting aluminum compounds | en_US |
dc.subject | Semiconducting gallium compounds | en_US |
dc.subject | Solar energy | en_US |
dc.subject | Voltage measurement | en_US |
dc.subject | AlGaN | en_US |
dc.subject | Detectivity | en_US |
dc.subject | High speed | en_US |
dc.subject | Metal-semiconductor-metal (MSM) | en_US |
dc.subject | Solar blind | en_US |
dc.subject | Heterojunctions | en_US |
dc.title | High-performance solar-blind photodetectors based on AlxGa 1_xN heterostructures | en_US |
dc.type | Article | en_US |