Engineered ultraviolet InGaN/AlGaN multiple-quantum-well structures for maximizing cathodoluminescence efficiency

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buir.contributor.authorSharma, Vijay Kumar
buir.contributor.orcidSharma, Vijay Kumar|0000-0002-2028-5715
dc.citation.epage6en_US
dc.citation.issueNumber1en_US
dc.citation.spage1en_US
dc.citation.volumeNumber12en_US
dc.contributor.authorZheng, Haiyang
dc.contributor.authorSharma, Vijay Kumar
dc.date.accessioned2023-03-01T06:29:40Z
dc.date.available2023-03-01T06:29:40Z
dc.date.issued2022-01-04
dc.departmentDepartment of Electrical and Electronics Engineeringen_US
dc.departmentDepartment of Physicsen_US
dc.departmentInstitute of Materials Science and Nanotechnology (UNAM)en_US
dc.description.abstractWe demonstrate a systematic way to understand and select the accelerating voltage for maximizing cathodoluminescence (CL) by correlating the carrier diffusion length with the efficiency of ultraviolet (UV) InGaN/AlGaN multiple quantum wells (MQWs). We showed that the absorption of MQWs benefits from the absorbed energy within the diffusion length below the MQWs. With this understanding, we have achieved good agreement between the experimental data of and the Monte Carlo (CASINO) simulations on the dependence of acceleration voltage and QW number on InGaN/AlGaN MQW structures. These findings indicate that CL-based UV generation from carefully engineered III-N MQW structures with an appropriate number of QWs is highly promising. The understanding and application of this work can be extended to electron-beam pumped devices emitting in deep-UV (200-280 nm) wavelengths. © 2022 Author(s).en_US
dc.identifier.doi10.1063/6.0001262en_US
dc.identifier.issn21583226
dc.identifier.urihttp://hdl.handle.net/11693/111980
dc.language.isoEnglishen_US
dc.publisherAmerican Institute of Physics Inc.en_US
dc.relation.isversionofhttps://dx.doi.org/10.1063/6.0001262en_US
dc.source.titleAIP Advancesen_US
dc.subjectAluminum alloysen_US
dc.subjectCathodoluminescenceen_US
dc.subjectMonte Carlo methodsen_US
dc.subjectSemiconductor alloysen_US
dc.subjectSemiconductor quantum wellsen_US
dc.titleEngineered ultraviolet InGaN/AlGaN multiple-quantum-well structures for maximizing cathodoluminescence efficiencyen_US
dc.typeArticleen_US

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