Gate induced monolayer behavior in twisted bilayer black phosphorus

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dc.citation.issueNumber3en_US
dc.citation.volumeNumber4en_US
dc.contributor.authorSevik, C.en_US
dc.contributor.authorWallbank, J. R.en_US
dc.contributor.authorGülseren, O.en_US
dc.contributor.authorPeeters, F. M.en_US
dc.contributor.authorÇakir, D.en_US
dc.date.accessioned2018-04-12T11:04:37Z
dc.date.available2018-04-12T11:04:37Z
dc.date.issued2017en_US
dc.departmentDepartment of Physicsen_US
dc.description.abstractOptical and electronic properties of black phosphorus strongly depend on the number of layers and type of stacking. Using first-principles calculations within the framework of density functional theory, we investigate the electronic properties of bilayer black phosphorus with an interlayer twist angle of 90°. These calculations are complemented with a simple k p model which is able to capture most of the low energy features and is valid for arbitrary twist angles. The electronic spectrum of 90° twisted bilayer black phosphorus is found to be x-y isotropic in contrast to the monolayer. However x-y anisotropy, and a partial return to monolayer-like behavior, particularly in the valence band, can be induced by an external out-of-plane electric field. Moreover, the preferred hole effective mass can be rotated by 90° simply by changing the direction of the applied electric field. In particular, a +0.4 (-0.4) V A-1 out-of-plane electric field results in a ~60% increase in the hole effective mass along the y (x) axis and enhances the m*y /m*x (m*x /m*y) ratio as much as by a factor of 40. Our DFT and k p simulations clearly indicate that the twist angle in combination with an appropriate gate voltage is a novel way to tune the electronic and optical properties of bilayer phosphorus and it gives us a new degree of freedom to engineer the properties of black phosphorus based devices. © 2017 IOP Publishing Ltd.en_US
dc.identifier.doi10.1088/2053-1583/aa80c4en_US
dc.identifier.issn2053-1583
dc.identifier.urihttp://hdl.handle.net/11693/37163
dc.language.isoEnglishen_US
dc.publisherIOP Publishingen_US
dc.relation.isversionofhttps://doi.org/10.1088/2053-1583/aa80c4en_US
dc.source.title2D Materialsen_US
dc.subjectBlack phosphorusen_US
dc.subjectEffective massen_US
dc.subjectElectric fielden_US
dc.subjectFirst principles calculationsen_US
dc.subjectK.pen_US
dc.titleGate induced monolayer behavior in twisted bilayer black phosphorusen_US
dc.typeArticleen_US

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