Formation of Ge nanocrystals with CW laser irradiation of Siox:Ge thin films

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buir.advisorAydınlı, Atilla
dc.contributor.authorGümüş, Melike
dc.date.accessioned2016-01-08T20:03:35Z
dc.date.available2016-01-08T20:03:35Z
dc.date.issued2015
dc.departmentDepartment of Physicsen_US
dc.descriptionAnkara : The Department of Physics and the Graduate School of Engineering and Science of Bilkent University, 2015.en_US
dc.descriptionThesis (Master's) -- Bilkent University, 2015.en_US
dc.descriptionIncludes bibliographical references leaves 64-67.en_US
dc.description.abstractGermanium and silicon are the materials which have effective absorption in the visible and near infrared region of electromagnetic spectrum; therefore they are preferred for optoelectronic device and solar cell applications. Si and Ge are the material of choice when it comes to solar cell applications due to their being low cost, widely available and inert. They have indirect bandgap and the absorption coefficient of indirect bandgap materials is lower than direct ones. It is known that decreasing dimensions of materials to nanometric sizes cause transition from indirect bandgap to direct bandgap behavior along with increasing band gap. Therefore decreasing their dimensions both a shift of the band gap toward the blue as well as an increase in absorption can be achieved. In this work, thin films of SiOx:Ge were fabricated with different germanium concentrations and annealed with CW Ar+ laser operating at 488 nm that resulted in formation of Ge nanocrystals in the SiOx matrix. Composition analysis of as grown samples were done by Rutherford Backscattering Spectroscopy, optical properties were determined by ellipsometry. Nanocrystal formation within laser irradiated samples was confirmed by Raman spectroscopy. Data were also collected about crystal formation by scanning surface texture with stylus surface profilometer. As a result of all the analysis, it was shown that crystal formation depends on germanium concentration in the SiOx matrix and laser irradiation power densityen_US
dc.description.degreeM.S.en_US
dc.description.provenanceMade available in DSpace on 2016-01-08T20:03:35Z (GMT). No. of bitstreams: 1 0006798.pdf: 4456713 bytes, checksum: 95fef12a805e1ee13caef85c0000cfce (MD5)en
dc.description.statementofresponsibilityGümüş, Melikeen_US
dc.format.extentix, 67 leaves, graphics, illustrationsen_US
dc.identifier.urihttp://hdl.handle.net/11693/16935
dc.language.isoEnglishen_US
dc.publisherBilkent Universityen_US
dc.rightsinfo:eu-repo/semantics/openAccessen_US
dc.subjectGe nanocrystalsen_US
dc.subjectPECVDen_US
dc.subjectthin filmsen_US
dc.subjectCW laser irradiationen_US
dc.subject.lccQC611.8.N33 G86 2015en_US
dc.subject.lcshNanocrystals.en_US
dc.subject.lcshThin films.en_US
dc.subject.lcshLaser beams.en_US
dc.titleFormation of Ge nanocrystals with CW laser irradiation of Siox:Ge thin filmsen_US
dc.typeThesisen_US

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