Visible photoluminescence from SiOx films grown by low temperature plasma enhanced chemical vapor deposition

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buir.contributor.authorAydınlı, Atilla
dc.citation.epage447en_US
dc.citation.issueNumber7en_US
dc.citation.spage443en_US
dc.citation.volumeNumber95en_US
dc.contributor.authorTimofeev, F. N.en_US
dc.contributor.authorAydınlı, Atillaen_US
dc.contributor.authorEllialtioglu, R.en_US
dc.contributor.authorTurkoglu, K.en_US
dc.contributor.authorGure, M.en_US
dc.contributor.authorMikhailov, V. N.en_US
dc.contributor.authorLavrova, O. A.en_US
dc.date.accessioned2016-02-08T10:52:18Z
dc.date.available2016-02-08T10:52:18Z
dc.date.issued1995en_US
dc.departmentDepartment of Physicsen_US
dc.description.abstracta-SiOx films of varying stoichiometry have been prepared by low temperature plasma enhanced chemical vapor deposition. The majority of films showed photoluminescence (PL) and films prepared in a narrow range of gas flows exhibited much stronger PL after annealing. Peak PL energies ranging from the ultraviolet to the near infrared have been observed. PL, infrared and X-ray diffraction on selected samples indicate formation of Si clusters in the films. The effects of annealing on the PL properties of the films have been found to depend on initial stoichiometry of the films. © 1995.en_US
dc.description.provenanceMade available in DSpace on 2016-02-08T10:52:18Z (GMT). No. of bitstreams: 1 bilkent-research-paper.pdf: 70227 bytes, checksum: 26e812c6f5156f83f0e77b261a471b5a (MD5) Previous issue date: 1995en
dc.identifier.doi10.1016/0038-1098(95)00299-5en_US
dc.identifier.issn0038-1098
dc.identifier.urihttp://hdl.handle.net/11693/25915
dc.language.isoEnglishen_US
dc.publisherPergamon Pressen_US
dc.relation.isversionofhttp://dx.doi.org/10.1016/0038-1098(95)00299-5en_US
dc.source.titleSolid State Communicationsen_US
dc.subjectA. thin filmsen_US
dc.subjectD. optical propertiesen_US
dc.subjectE. luminescenceen_US
dc.subjectAnnealingen_US
dc.subjectChemical vapor depositionen_US
dc.subjectGasesen_US
dc.subjectOptical propertiesen_US
dc.subjectPhotoluminescenceen_US
dc.subjectSemiconducting siliconen_US
dc.subjectStoichiometryen_US
dc.subjectThin filmsen_US
dc.subjectX ray diffractionen_US
dc.subjectLow temperature plasma enhanced chemical vapor depositionen_US
dc.subjectQuasi one dimensionalen_US
dc.subjectQuasi zero dimensionalen_US
dc.subjectSemiconductor nanocrystalen_US
dc.subjectSilicon oxidesen_US
dc.subjectVisible photoluminescenceen_US
dc.subjectOxidesen_US
dc.titleVisible photoluminescence from SiOx films grown by low temperature plasma enhanced chemical vapor depositionen_US
dc.typeArticleen_US

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