High quantum efficiency Type-II superlattice N-structure photodetectors with thin intrinsic layers

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buir.contributor.authorAydınlı, Atilla
dc.citation.volumeNumber8704en_US
dc.contributor.authorErgun, Y.en_US
dc.contributor.authorHostut, M.en_US
dc.contributor.authorTansel, T.en_US
dc.contributor.authorMuti, bdullahen_US
dc.contributor.authorKilic, A.en_US
dc.contributor.authorTuran, R.en_US
dc.contributor.authorAydınlı, Atillaen_US
dc.coverage.spatialBaltimore, Maryland, United Statesen_US
dc.date.accessioned2016-02-08T12:07:14Z
dc.date.available2016-02-08T12:07:14Z
dc.date.issued2013en_US
dc.departmentDepartment of Physicsen_US
dc.descriptionDate of Conference: 29 April–3 May 2013en_US
dc.descriptionConference name: Proceedings of SPIE, Proceedings of SPIE Infrared Technology and Applications XXXIXen_US
dc.description.abstractWe report on the development of InAs/AlSb/GaSb based N-structure superlattice pin photodiode. In this new design, AlSb layer in between InAs and GaSb layers acts as an electron barrier that pushes electron and hole wave functions towards the GaSb/InAs interface to perform strong overlap under reverse bias. Experimental results show that, with only 20 periods of intrinsic layers, dark current density and dynamic resistance at -50 mV bias are measured as 6×10-3 A/cm2 and 148 ωcm2 at 77K, respectively. Under zero bias, high spectral response of 1.2A/W is obtained at 5 μm with 50% cut-off wavelengths (λc) of 6 μm. With this new design, devices with only 146 nm thick i-regions exhibit a quantum efficiency of 42% at 3 μm with front-side illimunation and no anti-reflection coatings. © 2013 SPIE.en_US
dc.description.provenanceMade available in DSpace on 2016-02-08T12:07:14Z (GMT). No. of bitstreams: 1 bilkent-research-paper.pdf: 70227 bytes, checksum: 26e812c6f5156f83f0e77b261a471b5a (MD5) Previous issue date: 2013en
dc.identifier.doi10.1117/12.2016133en_US
dc.identifier.urihttp://hdl.handle.net/11693/27976
dc.language.isoEnglishen_US
dc.publisherSPIEen_US
dc.relation.isversionofhttp://dx.doi.org/10.1117/12.2016133en_US
dc.source.titleProceedings of SPIEen_US
dc.subjectMid-Wave-Infrared Photodiodeen_US
dc.subjectN-structure InAs/AlSb/GaSb superlattice pin photodiodeen_US
dc.subjectCutoff wavelengthsen_US
dc.subjectDynamic resistanceen_US
dc.subjectHigh quantum efficiencyen_US
dc.subjectHole wave functionsen_US
dc.subjectInAs/GaSben_US
dc.subjectMid-wave-infrared photodiodesen_US
dc.subjectPin photodiodeen_US
dc.subjectType-II superlatticesen_US
dc.subjectInfrared radiationen_US
dc.subjectPhotodiodesen_US
dc.subjectQuantum efficiencyen_US
dc.subjectSuperlatticesen_US
dc.titleHigh quantum efficiency Type-II superlattice N-structure photodetectors with thin intrinsic layersen_US
dc.typeConference Paperen_US

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