Radiative donor-acceptor pair recombination in TlInS2 single crystals

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dc.citation.epage603en_US
dc.citation.issueNumber7en_US
dc.citation.spage598en_US
dc.citation.volumeNumber14en_US
dc.contributor.authorAydınlı, A.en_US
dc.contributor.authorGasanly, N. M.en_US
dc.contributor.authorYılmaz, I.en_US
dc.contributor.authorSerpengüzel, A.en_US
dc.date.accessioned2016-02-08T10:41:17Z
dc.date.available2016-02-08T10:41:17Z
dc.date.issued1999en_US
dc.departmentDepartment of Physicsen_US
dc.description.abstractPhotoluminescence (PL) spectra of TlInS2 layered single crystals were investigated in the 500-860 nm wavelength region and in the 11.5-100 K temperature range. We observed two PL bands centred at 515 nm (2.41 eV, A band) and 816 nm (1.52 eV, B band) at T = 11.5 K and an excitation intensity of 7.24 W cm-2. A detailed study of the A band was carried out as a function of temperature and excitation laser intensity. A red shift of the A band position was observed for both increasing temperature and decreasing excitation laser intensity in the range from 0.12 to 7.24 W cm-2. Analysis of the data indicates that the A band is due to radiative transitions from the moderately deep donor level located at 0.25 eV below the bottom of the conduction band to the shallow acceptor level located at 0.02 eV above the top of the valence band. An energy-level diagram for radiative donor-acceptor pair transitions in TlInS2 layered single crystals is proposed.en_US
dc.description.provenanceMade available in DSpace on 2016-02-08T10:41:17Z (GMT). No. of bitstreams: 1 bilkent-research-paper.pdf: 70227 bytes, checksum: 26e812c6f5156f83f0e77b261a471b5a (MD5) Previous issue date: 1999en
dc.identifier.doi10.1088/0268-1242/14/7/302en_US
dc.identifier.issn0268-1242
dc.identifier.urihttp://hdl.handle.net/11693/25233
dc.language.isoEnglishen_US
dc.publisherInstitute of Physics Publishingen_US
dc.relation.isversionofhttp://dx.doi.org/10.1088/0268-1242/14/7/302en_US
dc.source.titleSemiconductor Science and Technologyen_US
dc.subjectBand structureen_US
dc.subjectPhase transitionsen_US
dc.subjectPhotoluminescenceen_US
dc.subjectSingle crystalsen_US
dc.subjectThallium compoundsen_US
dc.subjectThermoanalysisen_US
dc.subjectRadiative donor-acceptor pair recombinationen_US
dc.subjectSemiconductor materialsen_US
dc.titleRadiative donor-acceptor pair recombination in TlInS2 single crystalsen_US
dc.typeArticleen_US

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