Hydrodynamic approach for modelling transport in quantum well device structures

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buir.contributor.authorTanatar, Bilal
buir.contributor.orcidTanatar, Bilal|0000-0002-5246-0119
dc.citation.epage2219en_US
dc.citation.issueNumber17en_US
dc.citation.spage2211en_US
dc.citation.volumeNumber31en_US
dc.contributor.authorBesikci, C.en_US
dc.contributor.authorTanatar, Bilalen_US
dc.contributor.authorSen, O.en_US
dc.date.accessioned2016-02-08T10:44:18Z
dc.date.available2016-02-08T10:44:18Z
dc.date.issued1998en_US
dc.departmentDepartment of Physicsen_US
dc.description.abstractA semiclassical approach for modelling electron transport in quantum well structures is presented. The model is based on the balance equations governing the conservation of particle density, momentum and energy with Monte Carlo (MC) generated transport parameters. Three valleys of the conduction band, size quantization in the Γ valley, and the lowest two subbands in the quantum well are considered by taking the detailed intersubband dynamics into account. The transport parameters of the model are extracted from steady-state MC simulations based on an improved formulation of two-dimensional polar optical phonon scattering including screening effects. The predictions of the proposed model have been found to be in excellent agreement with those of the ensemble MC simulations under both time varying and spatially nonuniform fields. The calculated transport parameters which are of interest for device modelling are presented as a function of the electron energy for the AIGaAs/GaAs quantum well. The model serves as an accurate semiclassical alternative to costly ensemble MC simulations for studying the transport in quantum well structures and for the modelling and optimization of submicron devices based on these structures, such as modulation doped field-effect transistors (MODFETs).en_US
dc.description.provenanceMade available in DSpace on 2016-02-08T10:44:18Z (GMT). No. of bitstreams: 1 bilkent-research-paper.pdf: 70227 bytes, checksum: 26e812c6f5156f83f0e77b261a471b5a (MD5) Previous issue date: 1998en
dc.identifier.doi10.1088/0022-3727/31/17/021en_US
dc.identifier.issn0022-3727
dc.identifier.urihttp://hdl.handle.net/11693/25410
dc.language.isoEnglishen_US
dc.publisherInstitute of Physics Publishing Ltd.en_US
dc.relation.isversionofhttp://dx.doi.org/10.1088/0022-3727/31/17/021en_US
dc.source.titleJournal of Physics D: Applied Physicsen_US
dc.subjectComputer simulationen_US
dc.subjectElectron transport propertiesen_US
dc.subjectHydrodynamicsen_US
dc.subjectMonte Carlo methodsen_US
dc.subjectPhononsen_US
dc.subjectSemiconducting aluminum compoundsen_US
dc.subjectSemiconducting gallium arsenideen_US
dc.subjectSemiconductor device modelsen_US
dc.subjectSemiconductor device structuresen_US
dc.subjectEnergy conservation equationen_US
dc.subjectMomentum conservation equationen_US
dc.subjectParticle density conservation equationen_US
dc.subjectSemiconductor quantum wellsen_US
dc.titleHydrodynamic approach for modelling transport in quantum well device structuresen_US
dc.typeArticleen_US

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